Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

Hasan, Tanvir; Asano, Takashi; Tokuda, Hirokuni; Kuzuhara, Masaaki

doi:10.1109/led.2013.2280712

Cited by 99 publications

(60 citation statements)

References 12 publications

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“…The results indicated that current collapse was dramatically improved by the introduction of gate FP, and the improvement was more enhanced using a longer FP length. It was also found that the current collapse reduction was more pronounced when the gate bias during ON-state was chosen at more positive values, suggesting that the gate FP is capable of instantly supplying additional electrons into the channel access region [78].…”

Section: Current Collapsementioning

confidence: 96%

“…The comprehensive study on the effect of FP on the dynamic ON-resistance has been performed by preparing a series of AlGaN/GaN HEMTs with different FP lengths and gate-to-drain distance [78]. The results indicated that current collapse was dramatically improved by the introduction of gate FP, and the improvement was more enhanced using a longer FP length.…”

Section: Current Collapsementioning

confidence: 99%

See 1 more Smart Citation

Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

Kuzuhara

Tokuda

2015

IEEE Trans. Electron Devices

Self Cite

109

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This paper describes recent technological advances on III-nitride-based transistors for power switching applications. Focuses are placed on the progress toward enhancing the breakdown voltage, lowering the ON -resistance, suppressing current collapse, and reducing the leakage current in AlGaN/GaN high-electron mobility transistors (HEMTs). Recent publications revealed that the tradeoff relation between ON -resistance and breakdown voltage in AlGaN/GaN HEMTs exceeded the SiC limit and was getting close to the GaN limit; however, the breakdown voltage achieved was still lower than the theoretical impact ionization limit. A novel process featuring strain-controlled annealing with a metal stack, including Al gave rise to significant reduction in the sheet resistance in AlGaN/GaN heterostructures, suggesting the possibility of dramatic reduction in ON -resistance of GaN-based power devices. Some of the interesting approaches to suppress current collapse indicated that surface trapping effects must be controlled by the optimization of surface processing as well as by the reduction of bulk traps in the epitaxial layers. Close correlation between the local gate leakage current and point defects exposed on the free-standing GaN substrate demonstrated that further reduction of defects on bulk GaN substrates is truly required as future challenges

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Section: Current Collapsementioning

confidence: 96%

Section: Current Collapsementioning

confidence: 99%

Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

Kuzuhara

Tokuda

2015

IEEE Trans. Electron Devices

Self Cite

109

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“…This ensured that the R ON was reasonably measured in the linear region. The resulting dynamic R ON was recorded after pulsing gate signal from a quiescent bias of V gs_OFF = −5 V (OFF-state) to a drive voltage of V gs_ON = 1 V (ON-state) with a gate pulse on-time (t ON ) varying from 1 μs to 10 s. The off-time (t OFF ) was held constant at 100 ms. A detailed description of the same experimental setup is given in [3].…”

Section: Device Characteristics and Discussionmentioning

confidence: 99%

“…To facilitate quantitative representation of device current collapse, we have also introduced the normalized dynamic R ON (NDR) [3], which is defined as the ratio of the dynamic R ON to static R ON . The higher the NDR, the higher is the Interestingly, however, all the HPWV-annealed devices exhibited lower NDR, which was further decreased with increasing annealing temperature, suggesting the efficacy of HPWVA in mitigating current collapse.…”

Section: Device Characteristics and Discussionmentioning

confidence: 99%

“…The surface trapping depletes the underlying 2-D electron gas (2DEG), leading to the increased dynamic R ON , i.e., current collapse. Various approaches have been reported to address current collapse, such as the introduction of field-plate structures [3]- [6], applying suitable surface passivation layers [7], and employing high resistance nanowire channel structures [8]. While those methods have been demonstrated to be effective, current collapse still persists at high voltage switching stages even when using a combination of aforementioned schemes [4].…”

Section: Introductionmentioning

confidence: 99%

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Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing

Asubar

Kobayashi

Yoshitsugu

et al. 2015

IEEE Trans. Electron Devices

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We have demonstrated for the first time a remarkable reduction of current collapse in AlGaN/GaN highelectron-mobility transistors (HEMTs) by high-pressure water vapor annealing (HPWVA). The device subjected to HPWVA exhibited considerably low dynamic ON-resistance (R ON ), suggesting highly improved performance of these devices. Analyses of the results on normalized dynamic R ON experiments have shown the elimination of deeper traps by HPWVA, leading to the substantially reduced current collapse. X-ray photoelectron spectroscopy (XPS) studies revealed a significant increase in the oxygen core-level O 1s peak. Moreover, angleresolved XPS suggested the formation of surface oxide layer. These results indicate that the effective reduction of current collapse in the HPWVA-processed samples is likely due to the incorporation of active oxygen species generated by the HPWV into the AlGaN surface. These oxygen atoms eventually fill up near-surface nitrogen vacancies and promote the formation of Ga 2 O 3 native oxide and possibly Ga 2 O suboxide, which is known to be an excellent III-V surface passivant. HPWVA is a relatively simple, low-damage, and low-temperature process, and hence, it is found to be a highly feasible and promising alternative for realizing AlGaN/GaN HEMTs with improved performance.Index Terms-AlGaN/GaN high-electron-mobility transistor (HEMT), current collapse, high-pressure water vapor annealing (HPWVA), normalized dynamic R ON (NDR), ON-resistance, X-ray photoelectron spectroscopy (XPS).

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Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

121

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The ever‐increasing power density and operation frequency in electrical power conversion systems require the development of power devices that can outperform conventional Si‐based devices. Gallium nitride (GaN) has been regarded as the candidate for next‐generation power devices to improve the conversion efficiency in high‐power electric systems. GaN‐based high electron mobility transistors (HEMTs) with normally‐off operation is an important device structure for different application scenarios. In this review, an overview of a series of effective approaches to improve the performance of GaN‐based power HEMT devices is given. Modified epistructures are presented to suppress defects and current leakage, and low‐damage recess‐free processes are discussed in fabricating normally‐off HEMTs. Possible effects of dielectrics on a metal–insulator–semiconductor (MIS) structure are also intensively introduced. Metal/semiconductor contact engineering is investigated, and fabrication of Au‐free ohmic contact and graphene insertion layer to enhance the device performance is emphasized. Finally, the effects of field plates are studied through the use of simulated and fabricated devices.

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Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

Cited by 99 publications

References 12 publications

Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing

Recent Advances in GaN‐Based Power HEMT Devices

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