Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

Kaneko, Saichiro; Kuroda, Masayuki; Yanagihara, Manabu; Ikoshi, Ayanori; Okita, Hideyuki; Morita, Tatsuo; Tanaka, Kenichiro; Hikita, Masahiro; Uemoto, Yasuhiro; Takahashi, Satoru; Ueda, T.

doi:10.1109/ispsd.2015.7123384

Cited by 126 publications

(45 citation statements)

References 5 publications

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“…The GaN GIT adopts p-GaN with recessed gate to achieve normally-off. The Hybrid Drain embedded in the GIT (HD-GIT) allows the device to overcome the current collapse [14].…”

Section: Comparing Gate Drive Methods For Driving Gan Gitmentioning

confidence: 99%

Inductive Power Transfer for Electric Vehicles Using Gallium Nitride Power Transistors

Aaron¹,

Siek²

2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

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This chapter will present the application of the GaN Gate Injection Transistor (GIT) in Inductive Power Transfer (IPT) for Electric Vehicles (EV). IPT provides significant benefits over conventional plug-in chargers but suffers from lower efficiency. A high frequency inverter using GaN GIT, which has low on-resistance and gate charge, is implemented to reduce switching and conduction loss, resulting in higher efficiency. Different gate drive strategies will be compared for driving the GaN GIT at high slew rates while ensuring cross-conduction protection. The switching characteristics of the GaN GIT are studied and the inverter is designed to ensure low switching losses, while keeping overshoot and slew rates under control. Experiment results presented will demonstrate that the system efficiency peaks at 95% at 100 kHz operation and 92% at 250 kHz operation for a coil gap of 80 mm at 2 kW output power.Inductive Power Transfer for Electric Vehicles Using Gallium Nitride Power Transistors http://dx.doi.org/10.5772/intechopen.76057 125 Half bridge circuit loss modelingThe total losses in a half bridge circuit contains conduction loss, switching loss, ringing loss and dead time loss of the top and bottom power device and is shown in Eq.(3). The subscript top and bot respectively denote the top and bottom power device.

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“…The GaN GIT adopts p-GaN with recessed gate to achieve normally-off. The Hybrid Drain embedded in the GIT (HD-GIT) allows the device to overcome the current collapse [14].…”

Section: Comparing Gate Drive Methods For Driving Gan Gitmentioning

confidence: 99%

Inductive Power Transfer for Electric Vehicles Using Gallium Nitride Power Transistors

Aaron¹,

Siek²

2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

View full text Add to dashboard Cite

show abstract

“…Panasonic also uses a p-doped layer of GaN in their latest x-GaN Gate Injection Transistors (GITs), although an earlier version of the GIT used p-doped AlGaN rather than GaN as shown in Fig. 8 (b) [33], [43]. One key difference between these two methods is the forward voltage drop on the gate before steady-state gate current begins to flow, which may be due to the etching depth beneath the p-doped GaN layer.…”

Section: Enhancement-mode Devicesmentioning

confidence: 99%

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Jones

Wang

Costinett

2016

IEEE J. Emerg. Sel. Topics Power Electron.

837

324

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GaN power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This paper reviews the characteristics and commercial status of both vertical and lateral GaN power devices, providing the background necessary to understand the significance of these recent developments. Additionally, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic Rds,on, breakdown mechanisms, thermal design, device availability, and reliability qualification. This review will help prepare the reader to effectively design GaN-based converters as these devices become increasingly available on a commercial scale.

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“…It is worth noticing that through proper optimization of the growth parameters, and through the use of specific device structures, it is possible to completely suppress current collapse in GaN HEMTs with p-GaN gate. Kaneko et al [39] recently proposed to use hole injection from the drain to compensate the trapped electrons, thus eliminating the current collapse. …”

Section: Charge Trapping Processes Related To the P-gan Gatementioning

confidence: 99%

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

et al. 2017

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Abstract:GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews the most recent results on the technology and reliability of these devices by presenting original data. The first part of the paper describes the technological issues related to the development of a p-GaN gate, and the most promising solutions for minimizing the gate leakage current. In the second part of the paper, we describe the most relevant mechanisms that limit the dynamic performance and the reliability of GaN-based normally-off transistors. More specifically, we discuss the following aspects: (i) the trapping effects specific for the p-GaN gate; (ii) the time-dependent breakdown of the p-GaN gate during positive gate stress and the related physics of failure; (iii) the stability of the electrical parameters during operation at high drain voltages. The results presented within this paper provide information on the current status of the performance and reliability of GaN-based E-mode transistors, and on the related technological issues.

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Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

Cited by 126 publications

References 5 publications

Inductive Power Transfer for Electric Vehicles Using Gallium Nitride Power Transistors

Inductive Power Transfer for Electric Vehicles Using Gallium Nitride Power Transistors

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

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