Current collapse-free i-GaN∕AlGaN∕GaN high-electron-mobility transistors with and without surface passivation

Arulkumaran, S.; Hibino, Takeshi; Egawa, Takashi; Ishikawa, Hiroyasu

doi:10.1063/1.1830677

Cited by 24 publications

(26 citation statements)

References 10 publications

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“…This physical picture is essentially consistent with what was demonstrated by R. Coffie et al [13] and L. Shen et al [14]. The insight gained on these high speed GaN HEMTs (thus highly sensitive to dispersion) might also help shed light on the previously reported dispersion-free operation without passivation [15][16].…”

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confidence: 90%

Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation

Wang

Guo

et al. 2013

2013 IEEE International Electron Devices Meeting

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The origin and management of DC-RF dispersion in InAlN-based GaN high electron mobility transistors (HEMTs) is examined, in conjunction with consideration of the implications for device speed. This study, in which GaN HEMTs with alloyed and non-alloyed ohmic contacts are compared, renders the following observations and hypotheses: 1) We show and explain that dispersion free operation can be achieved without passivation. 2) The root cause of dispersion associated with surface states is often introduced during device processing; in particular, unintentional or un-optimized oxidation of the HEMT surface.3) These undesired surface states also lead to gate extension (virtual gate), which decreases device speed but increases the breakdown voltage. In addition, the function and efficacy of a plasma-based ultrathin passivation is evaluated.

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confidence: 90%

Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation

Wang

Guo

et al. 2013

2013 IEEE International Electron Devices Meeting

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“…Monosilane (10 ppm, diluted in hydrogen) and Cp 2 Mg were used as n-and p-type dopant. Two types of device structures, i) typical AlGaN/GaN HEMTs structure 8,12,27) and ii) AlGaN/GaN HEMTs structure, were grown with different cap layers i-GaN, 26) n-GaN, p-GaN and InGaN of thickness 3 nm. The schematic and band diagrams of the grown structures are shown in Fig.…”

Section: Growth Hall Effect and Surface Measurementsmentioning

confidence: 99%

“…4,8,12,26,27) A 100 nm-thick SiO 2 dielectric film was used as a mask, which was deposited on the dry etched samples using EB evaporation. The openings of ohmic and gate metals were formed by etching the SiO 2 using buffered HF solution with photolithography.…”

Section: Device Fabrication and Its Characterizationmentioning

confidence: 99%

“…This has been confirmed with the high temperature I DS -V DS measurements (see also the §3.5). 26) Further studies are under progress to understand the exact mechanism of BV gd for the HEMTs with different cap layers. The HEMTs with i-GaN cap layer exhibited low I gLeak with high BV gd among the other HEMTs.…”

Section: Hall Effect Surface and Schottky Contact Propertiesmentioning

confidence: 99%

“…Very recently, we have demonstrated current collapse-free i-GaN/AlGaN/GaN HEMTs with and without electron beam (EB) evaporated SiO 2 surface passivation. 26) No reports are available on the studies of AlGaN/GaN HEMTs with different cap layers. In this paper, we report on the studies of AlGaN/GaN HEMTs with different cap layers of i-GaN, n-GaN, p-GaN and InGaN.…”

Section: Introductionmentioning

confidence: 99%

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Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors

Arulkumaran

Egawa

Ishikawa

2005

Jpn. J. Appl. Phys.

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Systematic studies were performed on the influence of different cap layers of i-GaN, n-GaN, p-GaN and InGaN on AlGaN/ GaN high-electron-mobility transistors (HEMTs) grown on sapphire by metal organic chemical vapor deposition. The decrease of maximum extrinsic transconductance (g m ) and maximum drain current density (I Dmax ) values agrees with the product values of two-dimensional electron gas (2DEG) mobility ( H ) and 2DEG sheet concentration (n s ) of AlGaN/GaN HEMT structures. An improved Schottky barrier height with low surface roughness has been observed in AlGaN/GaN HEMT structure with i-GaN and n-GaN cap layers. The HEMTs with i-GaN cap layer exhibited low gate leakage current with high breakdown voltage among the other HEMTs. Though the HEMTs with n-GaN cap layer and without cap layers exhibited good H , g m , I Dmax values, the ac characteristics are not up to the extent of HEMTs with i-GaN cap layer. All the devices except the HEMTs with InGaN cap layers were operational even up to the measurement temperature of 350 C. The HEMTs with i-GaN cap layer exhibited collapse-free I DS -V DS characteristics with small I D hysteresis width variations among the other HEMTs. The observation of small threshold voltage variation, small drain current hysteresis width and small white light illumination effects confirms the existence of small trapping effects in HEMTs with i-GaN cap layers. Only one thermally activated trap level at À0:161 eV was observed on AlGaN/GaN HEMTs with i-GaN cap layer. However, each of the three trap levels has been observed in HEMTs with other cap layers and HEMTs without cap layers. From this, it is concluded that the collapserelated traps are screened/passivated from two-dimensional electron gas by the addition of thin i-GaN cap layer on AlGaN/ GaN HEMTs. The cap layer i-GaN (3 nm) is a promising candidate to get collapse-free AlGaN/GaN HEMTs.

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Semiconductor technologies

2009

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Semiconductor technologies continue to evolve and amaze us. New materials, new structures, new manufacturing tools, and new advancements in modelling and simulation form a breeding ground for novel high performance electronic and photonic devices. This book covers all aspects of semiconductor technology concerning materials, technological processes, and devices, including their modelling, design, integration, and manufacturing.High costs, long manufacturing cycles, and enormous increase in computing power are behind a recent rapid progress of the modelling, simulation, optimisation, and design of semiconductor devices. The first two chapters present the state-of-the-art in modelling of semiconductor processes and devices. Several examples are given: simulation of the switching characteristics of SiC GTO, MOSFET DC modelling for distortion analysis, or high-k dielectricsemiconductor modelling. VIIIOptical technologies are the future of communication systems. Chapter 14 is a review of a device engineering method to provide high functionality of passive nonlinear vertical-cavity devices exploiting saturable absorption in semiconductor MQWs. Chapter 15 is a summary of the stateof-the-art of all-optical flip-flops based on semiconductor technologies. Chapter 16 reviews the current development of optical detection technologies on silicon photonics platform. In chapter 17, the authors describe the design, fabrication technology, and device performance of InP Mach-Zehnder modulator monolithically integrated with semiconductor optical amplifier. In chapter 18, the authors propose a new approach to ultra-fast all-optical signal processing based on quantum dot devices. Chapter 19 discusses present status and future direction of all-optical digital processing through semiconductor optical amplifiers.Finally, chapter 20 presents a new approach to biomedical monitoring and analysis of selected human cognitive processes.

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Current collapse-free i-GaN∕AlGaN∕GaN high-electron-mobility transistors with and without surface passivation

Cited by 24 publications

References 10 publications

Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation

Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation

Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors

Semiconductor technologies

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