Curie–Weiss behavior of the low-temperature paramagnetic susceptibility of semiconductors doped and compensated with hydrogen-like impurities

Poklonski, N. A.; Dzeraviaha, A. N.; Вырко, С. А.; Zabrodskiĭ, A. G.; Veĭnger, A. I.; Semenikhin, P. V.

doi:10.1063/5.0048886

Cited by 10 publications

(5 citation statements)

References 33 publications

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“…According to [89], the energy of the exchange interaction of uncompensated spins is J = 2k B Θ/z, where k B is the Boltzmann constant. For the number of geometric neighbors in a random system z ≈ 15.47 [90] and the Curie-Weiss temperature Θ = 150 K (at which the magnetic moment of irradiated diamond is zero; see Figure 5), we have J ≈ 1.7 meV.…”

Section: Magnetic Properties Of Diamonds Irradiated With Fast Neutronsmentioning

confidence: 99%

Magnetic and Optical Properties of Natural Diamonds with Subcritical Radiation Damage Induced by Fast Neutrons

et al. 2023

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Raman spectroscopy and magnetic properties of the natural single crystalline diamonds irradiated with high fluences of fast reactor neutrons have been investigated. Raman spectra transformations were studied in the range from moderate levels up to radiation damage leading to diamond graphitization. The selection of fast neutrons irradiated diamonds for magnetic measurements was carried out according to Raman scattering data on the basis of the intensity criterion and the spectral position of the “1640” band. It was found that in natural diamonds irradiated with neutrons with an extremely high subcritical fluence F = 5 × 1020 cm−2, the transition from a diamagnetic to a ferromagnetic state is observed at the Curie–Weiss temperature of ≈150 K. The energy of the exchange magnetic interaction of uncompensated spins is estimated to be ≈1.7 meV. The differential magnetic susceptibility estimated from the measurements of magnetic moment for temperature 2 K in the limit of B ≈ 0 is χdiff ≈ 1.8 × 10−3 SI units. The nature of magnetism in radiation-disordered single-crystal hydrogen- and metal-free natural diamond grains was discussed.

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Section: Magnetic Properties Of Diamonds Irradiated With Fast Neutronsmentioning

confidence: 99%

Magnetic and Optical Properties of Natural Diamonds with Subcritical Radiation Damage Induced by Fast Neutrons

et al. 2023

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“…The mobility edge E c ð Þ m (see Figure 2), for the concentration of c-band electrons n ( Kð1 À KÞN d , is [28,29]…”

Section: The Main Relationships Of the Proposed Modelmentioning

confidence: 99%

“…The mobility edge

E_{m}^{(italicc)}

(see Figure 2), for the concentration of c ‐band electrons

n ≪ K (1 - K) N_{normald}

, is [ 28,29 ]

E_{m}^{(italicc)} = - δ E_{c} = E_{per}^{(italicc)} + E_{res} < 0

where

E_{per}^{(italicc)} = - 0.955 W_{n} < 0

is the percolation threshold (energy level) for the diffusion of c ‐band electrons;

W_{n}

is the root‐mean‐square (rms) fluctuation of the potential energy of c ‐band electron;

E_{res} = - I_{normald} a_{n} / R_{im} < 0

is the decrease of donor thermal‐ionization energy due to the confinement of the maximum radius of “optical” electron orbit around donor‐ion core due to the presence of other impurities in crystal;

I_{normald} = e^{2} / 8 π ε_{normalr} ε_{0} a_{n}

is the ionization energy of a single (isolated) donor with the Bohr radius

a_{n}

of electron orbit in n ‐type crystal;

E_{res} \approx - 1.612 (e^{2} / 8 π ε_{normalr} ε_{0}) [(1 + K) N_{normald}]^{1 / 3}

. The quantity

δ E_{c} > 0

is due to the formation of a quasi‐continuous band of delocalized electronic states from the excited states of donors below the bottom of...…”

Section: The Main Relationships Of the Proposed Modelmentioning

confidence: 99%

Model of DC Tunneling Conductivity via Hydrogen‐Like Impurities in Heavily Doped Compensated Semiconductors

Poklonski

Anikeev

Вырко

et al. 2023

Physica Status Solidi (b)

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“…The decrease in the thermal ionization energy of the hydrogen-like acceptor due to the confinement of the maximum Bohr radius of the hole orbit on the acceptor is given by the formula [21,22]…”

Section: General Relationshipsmentioning

confidence: 99%

Maximum hopping direct current conductivity via hydrogen-like impurities in semiconductors

et al. 2022

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A quasi-classical model for calculating DC (direct current) electrical conductivity in crystalline semiconductors with hydrogen-like impurities is developed at the transition from band conduction to impurity hopping conduction with decreasing temperature. This transition from the minimum band conductivity to the maximum hopping conductivity via impurities has the form of a characteristic "kink" in the temperature dependence of the electrical resistivity. The idea of the calculation is to preliminarily determine the transition temperature Tj using the standard approach within the framework of the two-band model. The shift of the top of the v-band (the bottom of the c-band) into the depth of the band gap due to the formation of a quasi-continuous band of allowed energy values from the excited states of acceptors (donors) is taken into account. This leads to a decrease in the value of a thermal ionization energy of the majority shallow impurities due to a decrease in the maximum localization radius of a hole on an acceptor (an electron on a donor) with increasing impurity concentration. The values of the observed maximum hopping conductivity and drift hopping mobility corresponding to the temperature Tj are calculated. The numerical calculation within the framework of the proposed model is consistent with the known experimental data on the electrical conductivity and Hall coefficient of moderately compensated p-Ge crystals doped by neutron transmutation and non-intentionally compensated metallurgically doped n-Ge, as well as n- and p-Si crystals on the insulator side of the Mott insulator--metal concentration phase transition. Keywords: bulk crystals of germanium and silicon, hydrogen-like acceptors and donors, holes and electrons, band and hopping motion of charge carriers.

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Curie–Weiss behavior of the low-temperature paramagnetic susceptibility of semiconductors doped and compensated with hydrogen-like impurities

Cited by 10 publications

References 33 publications

Magnetic and Optical Properties of Natural Diamonds with Subcritical Radiation Damage Induced by Fast Neutrons

Magnetic and Optical Properties of Natural Diamonds with Subcritical Radiation Damage Induced by Fast Neutrons

Model of DC Tunneling Conductivity via Hydrogen‐Like Impurities in Heavily Doped Compensated Semiconductors

Maximum hopping direct current conductivity via hydrogen-like impurities in semiconductors

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