CuO Nanowires Can Be Synthesized by Heating Copper Substrates in Air

Jiang, Xuchuan; Herricks, Thurston; Xia, Younan

doi:10.1021/nl0257519

Cited by 992 publications

(780 citation statements)

References 35 publications

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“…These measurements reveal the single-crystalline nature of the obtained nanowires. Moreover, extended defects such as twins-frequently observed in CuO nanostructures grown by thermal oxidation of Cu in air 15 -were not found in HRTEM observations of our samples. In addition, no elements other than copper and oxygen were detected by EDX microanalysis.…”

mentioning

confidence: 53%

Exchange bias in single-crystalline CuO nanowires

Dı́az-Guerra¹,

Vila²,

Piqueras³

2010

Applied Physics Letters

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Exchange anisotropy has been observed and investigated in single-crystalline CuO nanowires grown by thermal oxidation of Cu. The exchange bias field decreases by increasing temperature and can be tuned by the strength of the cooling field. A training effect has also been observed. The obtained results can be understood in terms of a phenomenological core-shell model, where the core of the CuO nanowire shows antiferromagnetic behavior and the surrounding shell behaves as a spin glass-like system due to uncompensated surface spins.

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mentioning

confidence: 53%

Exchange bias in single-crystalline CuO nanowires

Dı́az-Guerra¹,

Vila²,

Piqueras³

2010

Applied Physics Letters

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“…Studies at the nanoscale were recently conducted since copper oxide may have interesting applications in photovoltaics and chemistry 22,23 . At low oxygen exposure, a Cuprous oxide (Cu 2 O) forms until, at higher exposure, a Cupric (CuO) phase nucleates 22 and eventually forms nanowires 24 . Figure 1d, 1e and Supplementary section S1 confirm this scenario.…”

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confidence: 99%

Catalyst preparation for CMOS-compatible silicon nanowire synthesis

et al. 2009

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Metallic contamination was key to the discovery of semiconductor nanowires, but today it stands in the way of their adoption by the semiconductor industry. This is because many of the metallic catalysts required for nanowire growth are not compatible with standard CMOS (complementary metal oxide semiconductor) fabrication processes. Nanowire synthesis with those metals which are CMOS compatible, such as aluminium and copper, necessitate temperatures higher than 450 C, which is the maximum temperature allowed in CMOS processing. Here, we demonstrate that the synthesis temperature of silicon nanowires using copper based catalysts is limited by catalyst preparation. We show that the appropriate catalyst can be produced by chemical means at temperatures as low as 400 C. This is achieved by oxidizing the catalyst precursor, contradicting the accepted wisdom that oxygen prevents metal-catalyzed nanowire growth. By simultaneously solving material compatibility and temperature issues, this catalyst synthesis could represent an important step towards real-world applications of semiconductor nanowires.Comment: Supplementary video can be downloaded on Nature Nanotechnology websit

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“…21 Xia and co-workers reported the synthesis of CuO nanowires by heating copper substrates in air within the temperature range of 400-700 ºC. 22 Gandhi et al 23 reported the ultrasound assisted synthesis of nano-sized CuO using copper acetate and concentrated hydrochloric acid. Cu(OH) 2 nanowires have been prepared by ultrasound assisted solution route using Cu 7 Cl 4 (OH) 10 ·H 2 O as a precursor and hierarchical CuO nanowires were obtained by thermal transformation of the Cu(OH) 2 nanowires.…”

Section: Introductionmentioning

confidence: 99%

“…Despite considerable efforts devoted to the preparation of the nanosized CuO, [15][16][17][18][19][20][21][22][23][24][25] there is a lack of information about ultrasonic-assisted (US) preparation methods especially US thermal decomposition and US liquid hydrolysis methods.…”

Section: Introductionmentioning

confidence: 99%

Effect of Ultrasonic‐assisted Preparation Methods on Structure, Morphology and Optical Properties of Nanosized Cupric Oxide

Gharagozlou¹,

Rahnama²

2011

J Chinese Chemical Soc

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Cupric oxide is a p-type semiconductor with a narrow band-gap which is suitable for catalysis, electrochemical cells, field emission devices and gas sensor applications. Despite considerable efforts devoted to the preparation of the nanosized CuO, there is a lack of information about ultrasonic-assisted (US) preparation methods. Nanosized cupric oxide was successfully prepared through different ultrasonic-assisted (US) preparation methods. Furthermore, the influence of preparation method on the structure, morphology and optical properties of nanosized CuO has been reported. XRD patterns were identical to the single-phase pure CuO with a monoclinic structure. The enhancement of the crystallinity and crystallite size was observed for the sample prepared through the US thermal decomposition. The absorption band of CuO nanocrystals prepared through the US liquid hydrolysis shows a clear red shift of about 40 nm compared to those obtained with other preparation methods. Our results indicated that almost spherical CuO nanoparticles with an average size of 65 nm were prepared during the US thermal decomposition, while CuO rod-like nanostructures with an average diameter of about 16 nm were obtained via the US liquid hydrolysis method. The band gap values of nanosized CuO samples were larger than the reported value for the bulk CuO. Synthesized CuO samples by US methods with adjustable and controllable properties make the applicability of cupric oxide even more versatile.

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CuO Nanowires Can Be Synthesized by Heating Copper Substrates in Air

Cited by 992 publications

References 35 publications

Exchange bias in single-crystalline CuO nanowires

Exchange bias in single-crystalline CuO nanowires

Catalyst preparation for CMOS-compatible silicon nanowire synthesis

Effect of Ultrasonic‐assisted Preparation Methods on Structure, Morphology and Optical Properties of Nanosized Cupric Oxide

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