CuInSe2 for photovoltaic applications

Abstract

The properties and most successful methods for producing CuInSe2 films for solar-cell applications are reviewed and the production, analysis, and performance of photovoltaic devices based on CuInSe2 are discussed. The most successful methods for depositing thin CuInSe2 films for high-efficiency solar cells are three-source elemental evaporation and selenization of Cu/In layers in H2Se atmospheres. Devices based on CuInSe2 have achieved the highest conversion efficiencies for any nonepitaxial thin-film solar cell, 14.1% for a small cell and 10.4% (aperture efficiency) for a 3916-cm2 (4 sq. ft) device. Furthermore, high-efficiency devices have been produced by several groups and have shown no evidence of degradation of performance with time. The internal quantum efficiency is remarkably close to 100%, although various losses prevent making use of all of the generated carriers. The high performance results, in part, from the very-high-absorption coefficient of CuInSe2, which is of the order of 105 cm−1 for photons with energies slightly above 1 eV. Models of the operation of CuInSe2/CdS heterojunctions have begun to explain the processes limiting the device performance. The success of the models is based, in part, on the large amount of data which has accumulated on CuInSe2 in spite of the relatively short time it has been extensively studied.

Investigating the Control by Quantum Confinement and Surface Ligand Coating of Photocatalytic Efficiency in Chalcopyrite Copper Indium Diselenide Nanocrystals

“…[19][20][21][22][23] Moreover, these NCs display band-gaps of 4 <1.5 eV, which are in the visible region of the solar spectrum, and large absorption coefficients that are ideal for solar energy conversion. [24][25][26] In this context, there are few reports available demonstrating the photocatalytic activity of these NCs, and in all cases they were used in sensitizing wide band-gap semiconductors (e.g., ZnS, ZnO, and TiO 2 ). 19,27,28 To the best of our knowledge, no experimental reports are available showing quantum-confinement controlled photocatalytic degradation of pollutants [e.g., phenol, dimethyl-4-phenylenediamine (DMPD), methylene blue, and thiourea] in water with CuInSe 2 NCs, as presented in this article.…”

Intermixing and Formation of Cu-Rich Secondary Phases at Sputtered CdS/CuInGaSe2Heterojunctions

“…CuInGaSe2 (CIGS)-based thin film solar cells have been given considerable attention for several decades due to their long term stability and high solar conversion efficiencies [1][2][3][4][5]. Normally a thin buffer layer is deposited on the CIGS surface to form an expected p-n heterojunction and protect the CIGS surface from potential radiation damage induced by subsequent deposition of ZnO window layer.…”

CuInSe 2 phase formation during Cu2Se/In2Se3 interdiffusion reaction

“…1,2 In the manufacturing process for photovoltaic thin film devices the CIS phase is produced by a reactive phase formation involving several steps. In addition, several thin film processing models for CIS synthesis, CIS crystal growth during solidification and phase equilibria information for the ternary Cu-In-Se system have been reported.…”