CuInS2 based thin film solar cell with 10.2% efficiency

Scheer, Roland; Walter, T.; Schock, Hans‐Werner; Fearheiley, M. L.; Lewerenz, H. J.

doi:10.1063/1.110786

Cited by 301 publications

(141 citation statements)

References 18 publications

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“…The appearance of the rise of IPCE on the PtÀCdS/CuInS 2 sample at the short wavelength region suggests a filtering effect of the CdS (E g = 2.4 eV) buffer to decrease effective photoabsortion at the CuInS 2 film (i.e., photons absorbed at the front n-type layer could not utilize H 2 liberation). [18] Compared to the PtÀ CdS/CuInS 2 electrode, the spectrum of the PtÀZnS/CuInS 2 electrode reaches IPCE in a maximum region (ca. 15 %) even at wavelengths shorter than 500 nm and maintains high IPCE values of up to 800 nm.…”

Section: Properties Of Modified Cuins 2 Electrodes For H 2 Evolutionmentioning

confidence: 99%

Photoreduction of Water by using Modified CuInS₂ Electrodes

et al. 2010

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Polycrystalline CuInS(2) films were fabricated by sulfurization of electrodeposited Cu and In metallic precursor films. Structural analyses revealed that the CuInS(2) film formed compact agglomerates of crystallites with grain sizes of ca. 0.5-1.5 μm. Photoelectrochemical characterization revealed that the film was p-type with a flat band potential of 0.3-0.4 V (vs Ag/AgCl at pH 4), which is suitable for water reduction but cannot be for water oxidation. Upon loading Pt deposits, the film worked as a hydrogen (H(2)) liberation electrode under cathodic polarization. Moreover, by introduction of n-type thin layers such as CdS and ZnS on the CuInS(2) surface before the Pt loading, appreciable improvements of H(2) liberation efficiency were achieved: for the CdS modified sample, spectral response data showed incident photon to current efficiency as high as 20 % at wavelengths ranging from ca. 500 to 750 nm. Appreciable H(2) evolution on this sample under potentials of power-producing regions was also confirmed.

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Section: Properties Of Modified Cuins 2 Electrodes For H 2 Evolutionmentioning

confidence: 99%

Photoreduction of Water by using Modified CuInS₂ Electrodes

et al. 2010

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“…The deposition system includes a piezoelectric transducer operating at variable frequencies up to 1.2 MHz and the ultrasonic power of 120 W. ZnO:Ag thin solid films were deposited from a 0. 4 Zn] ratio of 2 at. % was applied at the ZnO Ag film preparation.…”

Section: Methodsmentioning

confidence: 99%

“…ZnO NCs are promising candidates for the different optoelectronic applications such as light emitting diodes [2][3][4][5][6][7]. The control of the ZnO defect structure in these nanostructures is a necessary step in order to improve the device quality.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence emission at aging in ambient air of ZnO:Ag nanocrystals obtained by ultrasonic spray pyrolysis

Lozada

Torchynska

Castañeda

2018

AIP Conference Proceedings

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“…This suggests that the quality of the material is different at the two interfaces, which can be explained by the segregation of Cu x S on the outer surface, which enhances the recombination rate of the photoinduced charge carriers. 10,26 …”

Section: Single Layersmentioning

confidence: 99%

A time-resolved microwave conductivity study of the optoelectronic processes in TiO2∣In2S3∣CuInS2 heterojunctions

Savenije

Nanu

Schoonman

et al. 2007

Journal of Applied Physics

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Photoinduced interfacial charge carrier generation, separation, trapping, and recombination in TiO 2 ͉In 2 S 3 ͉CuInS 2 cells have been studied with time-resolved microwave conductivity ͑TRMC͒. Single layer, double layer, and complete triple layer configurations have been studied. Selective electronic excitation in one of the components is accomplished by using monochromatic pulsed laser excitation. In bare CuInS 2 films and in TiO 2 ͉ CuInS 2 double layers, photoinduced charge carriers recombine on a subnanosecond time scale. This fast recombination slows down significantly when an In 2 S 3 buffer layer is applied between TiO 2 and CuInS 2 . In that case, the charge separation lifetime increases by more than one order of magnitude. A superlinear dependence of the TRMC signals on the incident laser intensity is observed for the triple layer configuration, which indicates saturation of electron traps in In 2 S 3 or hole traps in CuInS 2 . Furthermore, TRMC signals from TiO 2 ͉In 2 S 3 ͉CuInS 2 triple junctions and those from In 2 S 3 ͉ CuInS 2 double layers are identical, which shows that charge carrier separation exclusively takes place at the In 2 S 3 ͉ CuInS 2 interface.

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CuInS2 based thin film solar cell with 10.2% efficiency

Cited by 301 publications

References 18 publications

Photoreduction of Water by using Modified CuInS₂ Electrodes

Photoreduction of Water by using Modified CuInS₂ Electrodes

Photoluminescence emission at aging in ambient air of ZnO:Ag nanocrystals obtained by ultrasonic spray pyrolysis

A time-resolved microwave conductivity study of the optoelectronic processes in TiO2∣In2S3∣CuInS2 heterojunctions

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CuInS2 based thin film solar cell with 10.2% efficiency

Cited by 301 publications

References 18 publications

Photoreduction of Water by using Modified CuInS2 Electrodes

Photoreduction of Water by using Modified CuInS2 Electrodes

Photoluminescence emission at aging in ambient air of ZnO:Ag nanocrystals obtained by ultrasonic spray pyrolysis

A time-resolved microwave conductivity study of the optoelectronic processes in TiO2∣In2S3∣CuInS2 heterojunctions

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Photoreduction of Water by using Modified CuInS₂ Electrodes

Photoreduction of Water by using Modified CuInS₂ Electrodes