Cubic boron nitride thin films by tuned r.f. magnetron sputtering

Gimeno, S.; Andújar, J.L.; Lousa, A.

doi:10.1016/s0925-9635(96)00617-6

Cited by 19 publications

(4 citation statements)

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“…Voltage values between 60 and 600 V have been reported in the literature for different deposition methods. [4][5][6][7][8][9][10][11][12][13][14] This range of reported negative substrate biasing values necessary for the nucleation of cBN has not been explained in terms of fundamental plasma processes.…”

Section: Pressure Dependence Of the Negative Bias Voltage For Stabilimentioning

confidence: 99%

“…2. [4][5][6][7][8][9][10][11][12][13][14] The increase in the cBN threshold bias voltage as the pressure and/or sheath thickness increases is a consequence of the IED dependence with pressure. In the low-pressure range where the films were coated, 0.065-1.32 Pa, charge transfer is the dominant collision process in the sheath region because of its larger scattering cross section.…”

Section: Pressure Dependence Of the Negative Bias Voltage For Stabilimentioning

confidence: 99%

See 1 more Smart Citation

Pressure dependence of the negative bias voltage for stabilization of cubic boron nitride thin films deposited by sputtering

Otaño-Rivera

Pilione

Messier

1998

Applied Physics Letters

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Articles you may be interested inSemiconducting properties of zinc-doped cubic boron nitride thin films Characterization of cubic boron nitride growth using UV-extended real-time spectroscopic ellipsometry: Effect of plasma additions and dynamic substrate bias steps Cubic boron nitride thin film deposition by unbalanced magnetron sputtering and dc pulsed substrate biasing Growth mechanism of cubic boron nitride thin films by ion beam assist sputter deposition

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Section: Pressure Dependence Of the Negative Bias Voltage For Stabilimentioning

confidence: 99%

Section: Pressure Dependence Of the Negative Bias Voltage For Stabilimentioning

confidence: 99%

Pressure dependence of the negative bias voltage for stabilization of cubic boron nitride thin films deposited by sputtering

Otaño-Rivera

Pilione

Messier

1998

Applied Physics Letters

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“…[1][2][3][4] Although many studies have been done on c-BN film growth, there still remain several problems to be solved, including the control of the BN phase in deposited films and the adhesion strength. 3,5,6) Furthermore, the effect of deposition conditions, especially substrate temperature, on the growth process of c-BN films is not understood sufficiently. 2,7) The BN phase in deposited films is usually determined by Fourier transform infrared (FT-IR) measurement.…”

Section: Introductionmentioning

confidence: 99%

X-ray Absorption Studies on the Growth Process of Radio-Frequency-Magnetron-Sputtered Boron Nitride Films: Effects of Bias Voltage and Substrate Temperature

Hori

Niibe

Kotaka

et al. 2013

Jpn. J. Appl. Phys.

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We have investigated the effects of bias voltage and substrate temperature on the growth process of RF-magnetron-sputtered BN films. When the negative bias voltage was higher than 80 V, films including the sp 3 -BN phase grew even if the substrate temperature was RT. When the substrate temperature and the negative bias voltage were 600 C and >100 V, respectively, films containing more than 90% sp 3 -BN phase were grown. The growth process of films deposited at 150 and 600 C under a constant bias voltage of À100 V was studied by Near edge X-ray absorption fine structure (NEXAFS) measurements. These films consisted of two layers: an sp 2 -BN phase underlayer and an sp 3 -BN phase top layer. The sp 2 -BN underlayer had a preferential orientation of the c-axis parallel to the film surface. The thickness of the sp 2 -BN underlayer decreased with increasing substrate temperature. High substrate temperatures assisted the nucleation and growth of the sp 3 -BN phase.

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“…All the physical deposition techniques for cBN thin films growth involve energetic ion irradiation of the surface to initiate and sustain the formation the sp 3 -bonded cubic phase (10). Usually the energetic ion bombardment is thought to be responsible for the formation of the cubic phase (11)(12)(13). Without ion irradiation, the hBN is formed.…”

mentioning

confidence: 99%