Cu₂SnS₃ Nanocrystal-Based Hole-Transport Layer for Carbon Electrode-Based Perovskite Solar Cells

Abstract

Integrating a suitable hole-transport layer into carbon electrode-based perovskite solar cells can effectively promote their power conversion efficiencies. Here, Cu2SnS3 nanocrystals are synthesized by the hot-injection method, and their potential to function as hole-transport layers in carbon electrode-based perovskite solar cells is evaluated for the first time. The Cu2SnS3 nanocrystal hole-transport layer can efficiently extract photogenerated holes from perovskite films and suppress charge carrier recombination. As a result, carbon electrode-based perovskite solar cells employing Cu2SnS3 hole-transport layers can demonstrate a maximum power conversion efficiency of 16.75%.

Blade‐Coated Carbon Electrode Perovskite Solar Cells to Exceed 20% Efficiency Through Protective Buffer Layers

“…h) Efficiencies statistics from reported blade-coated perovskite with blade-coated carbon electrode. [6,[34][35][36][37][38][39][40][41][42][43][44][45] bilayer HTL delivered the most efficient performance with an efficiency of 17.06%, meaning that the bilayer structure is superior as HTL for carbon-based perovskite solar cells.…”

“…This state-of-the-art value first surpasses the 20% milestone among ambient air bladecoated perovskite solar cells with blade-coated carbon electrode (Figure 3h). [6,[34][35][36][37][38][39][40][41][42][43][44][45] To fully understand the reason for the improved efficiency after adoption of NiOx, we carried out optoelectronic analysis on charge dynamics relating to transfer, collection, and recombination at the perovskite/HTL interface. Typically, transient photovoltage (TPV) measurement is a precise technique to study the charge recombination process in solar cells.…”

“…f) Dark current-density of the three champion devices.g) The J-V curves of the best solar cells with P3HT, P3HT/NiOx and P3HT/m-NiOx HTLs. h) Efficiencies statistics from reported blade-coated perovskite with blade-coated carbon electrode [6,[34][35][36][37][38][39][40][41][42][43][44][45].…”

Advances in Hole Transport Materials for Layered Casting Solar Cells

“…Thus, it could be used to replace an expensive ETL layer such as spiro-OMeTAD [197]. CuS could also be combined with GO or modified in various compositions, such as CuSCN, Cu 2 CdSnS 4 , and Cu 2 SnS 3 , to improve the hole transport characteristics, surface engineering, and compactness of other kinds of active materials [198][199][200][201]. While CuS has a low band gap of ~1.5 eV, NiS possesses a wide range of band gaps from 1.9 to 2.4 eV, depending on the synthesis conditions and capping agents [202,203].…”