2021 IEEE 71st Electronic Components and Technology Conference (ECTC) 2021
DOI: 10.1109/ectc32696.2021.00299
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Cu Recrystallization and the Formation of Epitaxial and Non-Epitaxial Cu/Cu/Cu Interfaces in Stacked Blind Micro Via Structures

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Cited by 4 publications
(3 citation statements)
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“…The size of the areas with constant crystal orientation in the EBSD data (Figure 12) is similar to their extent on the non‐plated substrate (Figure 6), and greatly exceeds the 0.21μm$0.21{\rm{\ \mu m}}$ thickness of the deposit. This suggests that the electroless deposit is epitaxial with respect to the substrate 15 . The electroless deposit grew with a pattern of parallel dendrites (Figure 11B).…”
Section: Resultsmentioning
confidence: 94%
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“…The size of the areas with constant crystal orientation in the EBSD data (Figure 12) is similar to their extent on the non‐plated substrate (Figure 6), and greatly exceeds the 0.21μm$0.21{\rm{\ \mu m}}$ thickness of the deposit. This suggests that the electroless deposit is epitaxial with respect to the substrate 15 . The electroless deposit grew with a pattern of parallel dendrites (Figure 11B).…”
Section: Resultsmentioning
confidence: 94%
“…This suggests that the electroless deposit is epitaxial with respect to the substrate. 15 The electroless deposit grew with a pattern of parallel dendrites (Figure 11B). These dendrites, 0.1 − 0.2 μm wide, are narrower than the grooves on the etched substrate surface.…”
Section: Resultsmentioning
confidence: 99%
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