CSTBT (III) as the next generation IGBT

Takahashi, Tetsuo; Tomomatsu, Y.; Sato, Kazuhiko

doi:10.1109/ispsd.2008.4538900

Cited by 41 publications

(12 citation statements)

References 2 publications

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“…However, because the P-base of the IGBT extracts the holes at the cathode side, the lower carrier (hole) concentration will increase the on-state voltage (Von). Then, a heavily doped N-injector (the carrier store layer) is introduced under the P-base of the CSTBT (Carrier Store Trench Bipolar Transistor) [1][2][3] as a higher potential barrier for the holes to suppress the extraction of the holes at the cathode side. Unfortunately, the dose of the N-injector (DNI) is limited by the demand of the blocking capability.…”

Section: Introductionmentioning

confidence: 99%

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A Novel Shielded IGBT (SIGBT) With Integrated Diodes

Chen

Lin

et al. 2020

IEEE J. Electron Devices Soc.

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A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped Player to completely shield the N-injector and to protect the N-injector from high electric field more steadily. Then, the N-injector can be heavily doped to reduce the on-state voltage (Von), and Von can be designed independently of the breakdown voltage (BV). TCAD simulation indicates that under the same level of BV, compared with the conventional Carrier Store Trench Bipolar Transistor (CSTBT), the Eoff (the turn-off loss) of the proposed SIGBT is 85.6% lower under Von ≈ 1.4 V. Moreover, the saturation current density also decreases by 31.2%. Index Terms-carrier store trench bipolar transistor (CSTBT), on-state voltage, shielded insulated gate bipolar transistor (SIGBT), saturation current.

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Section: Introductionmentioning

confidence: 99%

“…FOC is a floating ohmic contact electrode. loss (Eoff) than both the CSTBT [3] and diode-clamped CSTBT (DC-CSTBT) [9] in the high-power application. Fig.…”

Section: Introductionmentioning

confidence: 99%

A Novel Shielded IGBT (SIGBT) With Integrated Diodes

Chen

Lin

et al. 2020

IEEE J. Electron Devices Soc.

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“…The compromise among on-state voltage (V on ), turning-off loss (E off ) and short circuit safe operating area (SCSOA) is the key issue need to be considered in the design of IGBTs. The IEGT (Injection Enhanced Gate Transistor) [1]- [3] and the CSTBT (Carrier Store Trench Bipolar Transistor) [4]- [5] were introduced to reduce the on-state voltage V on . In the CSTBT, with the increase of the doping concentration of the N-cs (N-doped carrier store layer), the V on of the IGBT is reduced and a better tradeoff between V on and E off can be obtained.…”

Section: Introductionmentioning

confidence: 99%

Trench Shielded Planar Gate IGBT (TSPG-IGBT) With Self-Biased pMOS Realizing Both Low On-State Voltage and Low Saturation Current

Chen

2020

IEEE J. Electron Devices Soc.

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A novel trench shielded planar gate IGBT (TSPG-IGBT) with self-biased pMOS is proposed in this paper. It features a Player beneath the trench of the TSPG-IGBT to form a self-biased pMOS, which provides an additional path for the hole current and clamps the potential of the nMOS's intrinsic drain for lower saturation current. In the off-state, with the increasing potential of the N-cs (N-doped carrier store layer), the self-biased pMOS turns on and the potential of the Player will be clamped by the hole channel. Then, the reverse voltage is sustained by the P-layer/N-drift junction and the potential of the N-cs is shielded by the clamped Player region. Therefore, the N-cs can be heavily doped to reduce the on-state voltage (V on) without decreasing the breakdown voltage. Compared with the conventional TSPG-IGBT, the V on of the proposed TSPG-IGBT is reduced by 0.3 V at the current density of 200 A/cm 2 with the same turn-off loss. Besides, the saturation current density of the proposed one is decreased by 24%. INDEX TERMS Insulated gate bipolar transistor (IGBT), self-biased pMOS, on-state voltage, saturation current, turn-off loss.

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“…Other IGBT structures such as the carrier stored trench bipolar transistor (CSTBT) [11] and the trench shield planar gate IGBT (TSPG-IGBT) [7] can also offer low C GC . However, the doping profile of the CS layers has to be well controlled to avoid threshold voltage variation [12] and the TSPG-IGBT has an additional JFET region that limits the reduction in V on .…”

Section: Introductionmentioning

confidence: 99%

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

Feng

Yang

Onozawa

et al. 2015

IEEE Electron Device Lett.

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A new fin p-body insulated gate bipolar transistor (Fin-p IGBT) is designed and experimentally demonstrated. The device features wide trenches and spacer gates, which is implemented using a simple and low-cost process. Compared with the conventional floating p-body IGBT, the fabricated Fin-p IGBT is able to achieve remarkable reduction in both Miller capacitance (−60% at V CE of 15 V) and gate charge (−46%).

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CSTBT (III) as the next generation IGBT

Cited by 41 publications

References 2 publications

A Novel Shielded IGBT (SIGBT) With Integrated Diodes

A Novel Shielded IGBT (SIGBT) With Integrated Diodes

Trench Shielded Planar Gate IGBT (TSPG-IGBT) With Self-Biased pMOS Realizing Both Low On-State Voltage and Low Saturation Current

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

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