Crystallography of Co/Cr bilayer magnetic thin films

Hara, Kazuhiro; Wong, Bunsen Y.; Laughlin, David E.

doi:10.1063/1.346155

Cited by 46 publications

(7 citation statements)

References 16 publications

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“…͓I CoFe(111) /I CoFe(220) ͔ random is assumed to be 4.6, the same as that calculated from the normalized intensity of diffraction rings for fcc Co. 31 The magnetization reversal of the exchange-coupled films was followed in real-time using the Fresnel mode of LTEM in a JEOL 4000EX microscope operated at 400 kV and modified by using a low-field objective lens in which the specimen sits in a field-free region. A variable in-plane magnetic field between Ϯ400 Oe could be applied in situ in the microscope using coils mounted in the sample holder.…”

Section: Methodsmentioning

confidence: 99%

Magnetization reversal of the ferromagnetic layer in IrMn/CoFe bilayers

Wang

Petford‐Long

2002

Journal of Applied Physics

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The magnetization reversal of the ferromagnetic layer in IrMn/CoFe exchange-coupled bilayer films with different antiferromagnetic ͑AFM͒ layer thicknesses (d AFM ) has been investigated using Lorentz microscopy and bulk magnetometry. These films exhibit very complex magnetization processes and the reversal mechanism is dependent on d AFM . Holding the film at negative saturation of the ferromagnetic layer for up to 87 h results in no change in the reversal mechanism or coercivity, but in a decrease in the exchange field. We believe that two energy barrier distributions with different time constants coexist. Thermally activated reversal of the antiferromagnetic layer with a large time constant results in an increasing shift of the entire hysteresis loop towards zero field with increased period of time spent at negative saturation, because of a reduction in the overall unidirectional anisotropy in the films. Thermal activation with a small time constant contributes to loop broadening, an asymmetry in reversal, and training effects. As d AFM decreases, the energy barriers for thermally activated reversal of the antiferromagnetic layer decrease so the changes in the antiferromagnetic layer become more significant, resulting in a greater effect on the reversal of the ferromagnetic layer.

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Section: Methodsmentioning

confidence: 99%

Magnetization reversal of the ferromagnetic layer in IrMn/CoFe bilayers

Wang

Petford‐Long

2002

Journal of Applied Physics

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“…Some of the rings that would appear in the randomly oriented films are missing in this pattern. Hono, Wong & Laughlin (1990) have developed tables for the determination of the intensities of the various hM rings relative to each other for various textures of b.c.c. Cr and hexagonal-close-packed (h.c.p.)…”

Section: Introductionmentioning

confidence: 99%

Electron Diffraction Patterns of Fibrous and Lamellar Textured Polycrystalline Thin Films. I. Theory

Tang¹,

Laughlin²

1996

J Appl Cryst

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The reciprocal lattices of fibrous and lamellar textured polycrystalline thin films are analyzed on the basis of the number of distinct angles made between planes of {hkl} families with the texture axis. Tables of the maximum possible number of such distinct angles between any given direction/plane and all faces of a given family of planes for all the crystal systems are included in this paper. Based on these reciprocal lattices, parallel and tilted electron-diffraction-pattern characteristics of the textured films are elucidated. A method of indexing the arced electron diffraction patterns of the textured films is proposed. This method can be applied to both the fibrous and lamellar texture films of all crystal structures. Formulas that relate the angles subtended by diffraction arcs to the distribution angle of the texture axis are presented.

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“…In addition, it has been reported [2,3] that the crystallographic orientation of a cobalt based alloy thin film, such as Co-CrTa, which is sputtered continuously onto a Cr underlayer, depends strongly on the orientation of the underlayer and that the in-plane component of magnetic anisotropy increases with the Cr underlayer deposition rate.…”

Section: Introductionmentioning

confidence: 98%

Influence of magnetic anisotropy distribution on interactions in Co-Cr-Ta thin films

et al. 1995

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Abstruct-In-plane remanence properties of Co-Cr-Ta thin films have been previously investigated in order to quantify magnetic interaction effects parallel to, and transverse to, the transfer direction. Samples were prepared at two deposition rates of the Cr underlayer. Magnetic layers deposited on high deposition rate Cr underlayer had lower peak heights of A Z and small coefficients of Id A Z/dHlmax. These properties were investigated for magnetic layer thicknesses between 20 and 100 nm. The magnetic interactions became stronger as the magnetic anisotropy increased with the decrease of the magnetic layer thickness. '

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Crystallography of Co/Cr bilayer magnetic thin films

Cited by 46 publications

References 16 publications

Magnetization reversal of the ferromagnetic layer in IrMn/CoFe bilayers

Magnetization reversal of the ferromagnetic layer in IrMn/CoFe bilayers

Electron Diffraction Patterns of Fibrous and Lamellar Textured Polycrystalline Thin Films. I. Theory

Influence of magnetic anisotropy distribution on interactions in Co-Cr-Ta thin films

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