Crystallographic study of phases present in CuInSe₂absorber layers produced by laser annealing co-electrodeposited precursors

Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

“…Consequently, further work has focused on an "intermediate" time/flux regime. [83][84][85][86] Fluxes between 150 and 945 W cm −2 and a dwell time up to 1 s gave a noticeable structural improvement. This is measurable as an observed increase in grain size between precursor and annealed samples in SEM [see Figs.…”

“…However, the initial device efficiency from an absorber formed in this process was negligible. An XRD study, 84 evidenced that these absorbers may contain an unreacted In 2 Se 3 secondary phase, and/or structural defects, quenched by the rapid cooling following laser irradiation. The cause for the low efficiency, however, was believed to stem from the loss of volatile Se from the film, even within the 1-s annealing time.…”

Fabrication, Characterization and Optical Properties of CuIn<sub>3</sub>Se<sub>5</sub> Bulk Compounds

“…Thus, our XR spectra show the presence of several preferential orientations according to planes (112), (220) and (312) for all samples. Since the characteristic peaks concerning the chalcopyrite structure were not observed, the conclusion was made that unlike the CuInSe 2 compounds, the CuIn 3 Se 5 compounds do not have a chalcopyrite structure [4] [12]. They either have a Stanite structure [13], an Ordered Defect Chalcopyrite structure (ODC), oran Ordered Vacancy Chalcopyrite structure (OVC).…”

“…The conversion efficiency of such cells on glass substrates is approaching 20% [2]. Some studies have shown that higher efficiency is reached in samples where a Cu(In 1−x Ga x ) 3 Se 5 phase is formed at the surface of the CuIn 1−x Ga x Se 2 layer [3] [4]. Therefore, CuIn 3 Se 5 has been of interest to many groups [4]- [6].…”

“…Some studies have shown that higher efficiency is reached in samples where a Cu(In 1−x Ga x ) 3 Se 5 phase is formed at the surface of the CuIn 1−x Ga x Se 2 layer [3] [4]. Therefore, CuIn 3 Se 5 has been of interest to many groups [4]- [6]. In this work crystals of CuIn 3 Se 5 (when x = 0) were grown by the horizontal Bridgman methods using a direct combination of high purity 5N for Cu, 6N for Se and Ga.…”