Crystallographic nature and formation mechanisms of highly irregular structure in implanted and annealed Si layers

The martensitic transformation in silicon—III. comparison with other work

“…Thus irradiation with energetic ions induces recrystallization at temperatures as low as 200°C [44]. Interestingly, in the ioninduced recrystallization of amorphous silicon, which occurs at temperatures below 400° C. there is no evidence of twins or hexagonal phase [50].…”

“…The absence of twins, and hence hexagonal silicon, in the ion-assisted experiments [50] is due to the fact that recrystallization takes place at such low temperatures ( < 400° C) that the partial dislocations are not sufficiently mobile to expand and form the faulted loops necessary for twin formation. On the other hand, with thermally-induced recrystallization, the temperature is in the right regime (450-650° C) where the mobility of the leading partial is sufficiently greater than that of the trailing partial so that the twinning mechanism can operate.…”

“…or post-implantation, annealing processes with a different volume-per-atom to that of silicon, hence producing local stresses. For instance, Komarov et al [50] attribute local stresses in Ar+ -implanted Si to formation of Ar bubbles which subsequently crystallize. In any case, the amorphous-+crystalline phase transformation generates considerable stresses in the implanted layer due to different density of the two pbases.…”

Degradation, amorphization, and recrystallization of ion bombarded si(111) surfaces studied by in situ reflection electron microscopy and reflection high energy electron diffraction techniques

“…In the special case of the solid-phase epitaxial (SPE) regrowth, the growth rate is drastically reduced when the substrate orientation is (111) (5) or when the Si has been rendered amorphous by bombardment with noble gas ions (4). For Ar bombardment, the SPE regrowth may be stopped in some cases and the resulting crystalline structure is always heavily faulted and defect rich (7,8). The influence of the orientation of the substrate on the regrowth rate as well as the effect of the noble gases on the regrowth is still a matter of question.…”

Topographie de surfaces Si(111) après bombardement d'ions Ar+ et recuit thermique

“…En particulier, la recristallisation par epitaxie, a partir de l'interface cristal/amorphe, est consid6rablement ralentie lorsque l'orientation initiale du substrat est de type (111) [3], ou lorsque le silicium est amorphisd par implantation d'ions de gaz rares [2]. Dans le cas de 1'argon, un arr6t complet de cette recristallisation a meme ete observe et la couche recristallisde prdsente un ddsordre rdsiduel tr6s important [5,6]. L'influence de l'orientation initiale du substrat et de la nature du gaz rare implante, sur la recristallisation du silicium amorphe, reste cependant peu comprise.…”