Crystallization processes in a-Ge thin films

Barna, Á.; Barna, P.B.; Pócza, J.F.

doi:10.1016/0022-3093(72)90114-7

Cited by 102 publications

(19 citation statements)

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“…Ge‐rich ZrO 2 films (GeZrO x ) were deposited by MS and Ge ion implantation . Thin ZrO 2 films crystallize at higher temperatures than thin films of Ge . One would therefore expect that the formation of Ge nanocrystals within an amorphous matrix is possible.…”

Section: Influence Of Different Matrix Materialsmentioning

confidence: 99%

“…[157] Thin ZrO 2 films [158][159][160] crystallize at higher temperatures than thin films of Ge. [161][162][163][164] One would therefore expect that the formation of Ge nanocrystals within an amorphous matrix is possible. However, in the case of GeZrO x layers, Ge and ZrO 2 crystallize simultaneous at 650 C. [151,152] In order to increase the crystallization temperature of the matrix, the ZrO 2 was doped with tantalum.…”

Section: Zirconium Oxide and Zirconium-tantalum Oxidementioning

confidence: 99%

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A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics

Lehninger

Beyer

Heitmann

2018

Physica Status Solidi (a)

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In this article, the work on Ge nanocrystals embedded in dielectric films formed by phase separation from supersaturated solid solutions is reviewed. Different methods to synthesize supersaturated solid solutions are covered, e.g., magnetron sputtering, ion implantation, and chemical vapor deposition. The phase separation is activated by subsequent high temperature annealing. Important parameters that influence the formation and properties of the Ge nanocrystals are discussed. Various matrix materials like SiO2, Al2O3, HfO2, HfAlOx, Lu2O3, ZrO2, TaZrOx, and Si3N4 are reported in the literature. The influence of the matrix on the formation and properties of the Ge nanocrystals is addressed in this review. Ge nanocrystals are investigated for applications such as charge storage nodes in nonvolatile memory devices or as silicon technology compatible light emitters. A key to establish these applications seems to be embedding the Ge nanocrystals in still amorphous matrices. This could help to avoid grain boundaries that act as leakage paths for electrical charges (unfavorable for nonvolatile memories) and facilitate defects, which could act as recombination centers (unfavorable for light emitters). A further important point is the synthesis of size and position controlled Ge nanocrystals. Both aspects are reviewed for Ge nanocrystals embedded in the mentioned matrix materials.

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Section: Influence Of Different Matrix Materialsmentioning

confidence: 99%

Section: Zirconium Oxide and Zirconium-tantalum Oxidementioning

confidence: 99%

A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics

Lehninger

Beyer

Heitmann

2018

Physica Status Solidi (a)

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“…Recent investi gations have shown that amor phous Ge crystallizes in the range 300-400°C , and the re ported activation energies range from 1.4 eV -3. 5 eV (Barna , Barna and Pocza , 1972;Germain , Sque lard , Bour goin and Gheorghiu, 1975 ;Chik and Lim , 1975). Sinc e specimen c ontamination in evaporated samples has a str ong effect on the crystallization temperatur e and kinetics , special attention should be paid to results obtained from regrowth in amorphous Ge and Si la yer s produced by ion implantation of single crystals , since this technique produces very clean samples.…”

Section: Ntroductionmentioning

confidence: 99%

A structural model for the interface between amorphous and crystalline Si or Ge

Spaepen

1978

Acta Metallurgica

113

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“…Here, this transition shown also in Figure 2g occurs at 295 °C. The highest amorphous‐to‐crystalline phase transition temperature within the GST system is given by pure Ge films with T c above 380 °C 43…”

Section: Resultsmentioning

confidence: 99%

Functional Coatings on High‐Performance Polymer Fibers for Smart Sensing

Galinski

Leutenegger

Amberg

et al. 2020

Adv Funct Materials

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Above a critical temperature, high‐performance fibers may lose their mechanical properties resulting in catastrophic events of damage when, e.g., used as load‐carrying ropes. Here, a method to functionalize polymer fibers with thermochromic optical coatings that enable signaling of damaging thermal history is introduced. These smart coatings are comprised of an index‐tunable anti‐reflection coating based on chalcogenide phase change materials (PCM). It is demonstrated that the insulator−metal phase transition of these materials can be aligned with the critical deterioration temperature of both polyethylene terephthalate (PET) monofilaments and liquid‐crystal polyester (LCP) yarns by composition tuning. The carefully designed optical system amplifies the change in optical properties of its constituents upon phase change. The thermal and mechanical degradation of these fibers can thus be monitored and displayed by eye.

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Crystallization processes in a-Ge thin films

Cited by 102 publications

References 1 publication

A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics

A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics

A structural model for the interface between amorphous and crystalline Si or Ge

Functional Coatings on High‐Performance Polymer Fibers for Smart Sensing

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Crystallization processes in a-Ge thin films

Cited by 102 publications

References 1 publication

A Review on Ge Nanocrystals Embedded in SiO2 and High‐k Dielectrics

A Review on Ge Nanocrystals Embedded in SiO2 and High‐k Dielectrics

A structural model for the interface between amorphous and crystalline Si or Ge

Functional Coatings on High‐Performance Polymer Fibers for Smart Sensing

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Product

Resources

About

A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics

A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics