Crystallization of thin polycrystalline PZT films on Si/SiO2/Pt substrates

Explosive crystallization of PZT microstructures by femtosecond infrared radiation

“…Film of a solid solution of lead zirconate titanate (PZT) with thickness 700 nm, with a 10 percent excess lead oxide (Рb(Zr 0,54 Ti 0,46 )О 3 +10%PbO) was deposited on platinized silicon substrate by RF magnetron sputtering (without annealing) [6].…”

“…The large tensile stresses in the amorphous regions surrounding the crystallized areas can be a reason of increasing of activation energy [9]. Such stresses occur due to increased density of the crystallized material [10]. Increasing the annealing time to t A2 (рис.…”

Mechanism of the phase transformation of the pyrochlore phase into the perovskite phase in lead zirconate titanate films on silicon substrates

“…However, the specific microscopic mechanism of the phase transition and the influence of lead and zirconium oxides on the kinetics of the phase transition in that work were not investigated. In our more recent work [3], we revealed that, during the annealing of the PZT films at a tem perature in the range 540-550°C, the film undergoes a shrinkage, which is accompanied by a decrease in the film volume. It was suggested that the observed shrink age of the material in the course of the pyrochloreperovskite phase transition, quite possibly, can be Abstract-The phase transformation from the pyrochlore phase into the perovskite phase in ferroelectric films of lead zirconate titanate on silicon substrates due to annealing of samples has been investigated exper imentally and theoretically.…”

“…If the PZT film has a lead deficiency, in this case, part of the film volume will be occupied by the parasitic low tem perature pyrochlore phase, which does not exhibit fer roelectric properties. Conversely, an excessive lead concentration in PZT films brings about the formation of lead oxide microinclusions in the perovskite matrix of the ferroelectric layer, and it is this circumstance that significantly changes the ferroelectric properties of the PZT films [3].…”

Механизмы Поглощения Терагерцового И Инфракрасного Излучения В Пленках PZT

“…Пленки сложных оксидов получают методами хими-ческого осаждения металлорганических соединений из газовой фазы (metalorganic chemical vapour depositions, MOCVD) [26,27], импульсного лазерного осаждения (pulsed laser deposition, PLD) [28], высокочастотного магнетронного распыления [29][30][31], гидротермальным методом [32], методами химического осаждения из рас-творов (chemical solution deposition, CSD), включая золь-гель метод [33,34], а также методами молекулярно-лучевой эпитаксии (MBE) [35].…”