Crystallization of amorphous-Si films by flash lamp annealing

Pécz, B.; Dobos, László; Panknin, D.; Skorupa, W.; Lioutas, Ch. B.; Vouroutzis, Ν.

doi:10.1016/j.apsusc.2004.08.015

Cited by 79 publications

(42 citation statements)

References 19 publications

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“…A new method of forming high-quality c-Si on cheap glass substrates, flash lamp annealing (FLA), has been studied by Pecz et al [8]. In this process, wafers are preheated to temperatures up to the softening point of glass, and then homogeneously irradiated by a light pulse with a duration of approximately 20 ms. By irradiating the whole sample, this process can give low-cost high-throughput manufacturing, with good uniformity of grain size across wafers.…”

Section: Introductionmentioning

confidence: 99%

Modelling of flash-lamp-induced crystallization of amorphous silicon thin films on glass

Smith¹,

McMahon²,

Voelskow

et al. 2005

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Modelling of flash-lamp-induced crystallization of amorphous silicon thin films on glass

Smith¹,

McMahon²,

Voelskow

et al. 2005

Journal of Crystal Growth

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“…[34][35][36][37][38] Consequently, FLA is a suitable technology to power high temperature processes even on temperature sensitive substrates. 34 Examples for the application of FLA are the activation of dopants and the defect annealing after ion implantation to form ultra-shallow junctions, 37,38 the crystallization of amorphous silicon in order to produce crystalline silicon on various substrates, 36,[39][40][41] the thermal treatment of high-k dielectrics for memory and transistor applications 42,43 and of transparent conductive oxide films for solar cell applications, 34 the sintering of particles 44 as well as ink-jet printed films, 45 and the deposition of thin films. [22][23][24][25][26][27][28][29] The latter use of FLA is the object of flash-enhanced ALD, which we describe in the following also abbreviated as FEALD.…”

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confidence: 99%

Flash-Enhanced Atomic Layer Deposition: Basics, Opportunities, Review, and Principal Studies on the Flash-Enhanced Growth of Thin Films

Henke

Knaut

Hoßbach

et al. 2015

ECS J. Solid State Sci. Technol.

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Within this work, flash lamp annealing (FLA) is utilized to thermally enhance the film growth in atomic layer deposition (ALD). First, the basic principles of this flash-enhanced ALD (FEALD) are presented in detail, the technology is reviewed and classified. Thereafter, results of our studies on the FEALD of aluminum-based and ruthenium thin films are presented. These depositions were realized by periodically flashing on a substrate during the precursor exposure. In both cases, the film growth is induced by the flash heating and the processes exhibit typical ALD characteristics such as layer-by-layer growth and growth rates smaller than one Å/cycle. The obtained relations between process parameters and film growth parameters are discussed with the main focus on the impact of the FLA-caused temperature profile on the film growth. Similar, substrate-dependent growth rates are attributed to the different optical characteristics of the applied substrates. Regarding the ruthenium deposition, a single-source process was realized. It was also successfully applied to significantly enhance the nucleation behavior in order to overcome substrate-inhibited film growth. Besides, this work addresses technical challenges for the practical realization of this film deposition method and demonstrates the potential of this technology to extend the capabilities of thermal ALD. Atomic layer deposition (ALD) is a specific thin film deposition method wherein film growth is based on a sequence of alternating saturated surface reactions. In a typical ALD process, this is realized by the alternating exposure of the substrate surface to two precursors, which are separated from each other by inert gas purging or chamber evacuation in order to prevent gas phase reactions. As a result, the film growth proceeds in a self-limiting manner and monolayer-by-monolayer, and thus, ALD enables the deposition of thin films with excellent uniformity and conformality as well as with sub-nanometer thickness control. Thanks to these unique characteristics, ALD has emerged as an important thin film deposition technique in semiconductor technology, e.g. in the fabrication of metal-insulator-metal (MIM) film stacks in high aspect ratio dynamic random access memory (DRAM) structures and gate dielectrics in transistors. In recent years, the use of ALD has also expanded into other fields such as optoelectronics, energy conversion and storage devices, micro-electro-mechanical-systems (MEMS) and nanotechnology. [1][2][3][4][5][6] Although a large number of materials have been deposited by ALD so far 1-6 for various applications, there are still a number of challenges in ALD. The deposition temperatures in ALD are mostly lower compared to chemical vapor deposition (CVD) processes due to the different mechanisms of film growth and the necessity to prevent precursor decomposition in order to keep the self-limiting growth behavior of ALD. As a consequence of the lower energy available for film formation, the films may not meet the properties required for the specific...

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“…The deposition process is followed by a short flash pulse using a xenon lamp for fast annealing, a technique that is known from crystallization of amorphous silicon and activation of doping agents in bulk amorphous silicon [10][11][12][13]. The whole procedure is performed under ambient pressure (*1 bar) or moderate vacuum conditions (*10 -3 mbar).…”

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confidence: 99%

Polycrystalline silicon foils by flash lamp annealing of spray-coated silicon nanoparticle dispersions

et al. 2015

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A novel technique for the preparation of thin silicon foils (d & 10 lm) starting from silicon nanoparticle dispersions is reported. The basic steps are ultrasonic spray coating of mixtures of silicon nanoparticles and organosilicon compounds and subsequent flash lamp annealing (FLA). The organosilicon compounds are used to stabilize the silicon nanoparticles in dispersion. The FLA induces melting of the silicon nanoparticles which transform into polycrystalline silicon thin films. Parameter adjustment (e.g., pressure, flash duration, flash energy, and substrate temperature) allows for the preparation of thin films as well as free-standing and flexible silicon foils. If the sprayed film thickness reaches a critical value (d & 20 lm) and the FLA is performed under vacuum conditions (5 9 10 -3 mbar), then the film peels off from the molybdenum substrate. In a following step, the foil is flashed by FLA from the backside. This method targets thin silicon foils exhibiting thicknesses between 5 and 10 lm. The lateral size of silicon foils depends on the setup used. In this work, samples with a maximum area of approximately 5 9 5 cm 2 were produced. The silicon foils were investigated by scanning electron microscopy and spectroscopic ellipsometry to determine thickness, surface structure, and the effective dielectric response. The compositions (Si, C, and O) and the bond characteristics of Si-O and Si-C were analyzed by means of energy dispersive

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Crystallization of amorphous-Si films by flash lamp annealing

Cited by 79 publications

References 19 publications

Modelling of flash-lamp-induced crystallization of amorphous silicon thin films on glass

Modelling of flash-lamp-induced crystallization of amorphous silicon thin films on glass

Flash-Enhanced Atomic Layer Deposition: Basics, Opportunities, Review, and Principal Studies on the Flash-Enhanced Growth of Thin Films

Polycrystalline silicon foils by flash lamp annealing of spray-coated silicon nanoparticle dispersions

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