Crystallization of amorphous Ge thin film using Cu nanoparticle synthesized and delivered by ferritin

Uenuma, Mutsunori; Zheng, Bin; Bundo, Kosuke; Horita, Masahiro; Ishikawa, Yasuaki; Watanabe, Heiji; Yamashita, Ichiro; Uraoka, Yukiharu

doi:10.1016/j.jcrysgro.2013.07.032

Cited by 10 publications

(7 citation statements)

References 26 publications

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“…Several studies were conducted on Ge-based Cu-MIC and Gebased Cu-MIC TFTs on insulators and flexible substrates. [36][37][38][39][40][41][42][43][44][45] It was reported that high concentrations of holes in the order of 10 18 cm −3 are generated in Ge-based polycrystalline films if the films exhibit a thickness of approximately 30 nm. 25,46) The aforementioned types of hole concentrations generate high off-currents in junctionless (JL) p-ch TFTs.…”

Section: Introductionmentioning

confidence: 99%

Four-terminal polycrystalline Ge_1−xSn _x thin-film transistors using copper-induced crystallization on glass substrates and their application to enhancement/depletion inverters

Miyazaki¹,

Hara²

2020

Jpn. J. Appl. Phys.

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Polycrystalline germanium-tin (Ge 1−x Sn x ) thin films with a thickness of 15 nm were grown at 500 °C using Cu-induced crystallization. The films were applied to fabricate four-terminal (4T) thin-film transistors (TFTs) on a glass substrate. The top gate (TG) was fabricated from 30 nm thick SiO 2 , while the bottom gate (BG) consisted of a double layer of HfO 2 and SiO 2 with a capacitance equivalent thickness of 16 nm. Aluminuminduced lateral metallization of the source and drain (SD) was implemented to decrease the parasitic resistance of the SD. The I on /I off of the double gate approximately corresponded to 1 × 10 4 . Furthermore, 4T poly-Ge 1−x Sn x TFTs operated with a field-effect mobility of 20 cm 2 V −1 s −1 for the TG drive and 12 cm 2 V −1 s −1 for the BG drive at a control gate voltage of 0 V in both cases. A p-channel enhancement/depletion inverter was validated based on the precise control of threshold voltage using a control gate.

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Section: Introductionmentioning

confidence: 99%

Four-terminal polycrystalline Ge_1−xSn _x thin-film transistors using copper-induced crystallization on glass substrates and their application to enhancement/depletion inverters

Miyazaki¹,

Hara²

2020

Jpn. J. Appl. Phys.

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“…Metal-induced crystallization (MIC) is a well-known technique to facilitate the crystallization of amorphous Ge (a-Ge) using catalytic metals. − High-quality Ge thin films have been locally obtained on amorphous substrates by limiting the metal area, which will be useful for transistor applications. − On the other hand, for large area formation, MIC via the layer exchange between a-Ge and metals has been developed, allowing for a large-grained, oriented poly-Ge. − Using the layer exchange technique, we demonstrated highly (111)-oriented poly-Ge thin films with large grains (10–200 μm) on glass and flexible polymers at low temperatures (180–350 °C). , The (111) orientation in Ge has the following advantages: it provides the highest mobility in metal–oxide–semiconductor field-effect transistors, , has a good lattice matching with group III–V semiconductors and silicide materials, , and produces vertically aligned nanowires . Therefore, Al-induced-crystallized Ge (AIC-Ge) is expected as a seed layer for synthesizing various functional materials in amorphous substrates.…”

Section: Introductionmentioning

confidence: 99%

Improved Surface Quality of the Metal-Induced Crystallized Ge Seed Layer and Its Influence on Subsequent Epitaxy

Toko

Nakazawa

Saitoh³

et al. 2015

Crystal Growth & Design

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Al-induced crystallized Ge (AIC-Ge) seeded epitaxy is a promising way to fabricate functional materials on amorphous substrates such as glass or polymer sheets. However, the AIC-Ge had difficulty in producing a continuous thin film without forming fine-grain Ge islands stacked on the surface. In this paper, we solved this problem by initially preparing thicker Ge (100 nm) than Al (50 nm) and then removing excess Ge islands using a unique etching technique. The resulting AIC-Ge allowed for a high ( 111) orientation (96%) and large grains (>100 μm). Transmission electron microscopy demonstrated that an AIC-Ge-seeded Ge layer, grown by molecular-beam epitaxy at 500 °C, was of high quality reflecting the annihilation of Ge islands. This method opens up the possibility for synthesizing Ge, GaAs, and other functional materials on an amorphous substrate.

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“…We used metal-induced crystallization using copper (Cu-MIC) [8][9][10][11][12][13][14][15] for the crystallization process of the Ge 1-x Sn x thin film to be simple and performed at low temperature. In our first research, double-gate (DG) Cu-MIC p-ch low-temperature poly-Ge 1-x Sn x TFTs with sputtering target of x=0.07, which were fabricated on a glass substrate using the mask alignment process to adjust the top and bottom metal gates, showed a mobility of 4 cm 2 /Vs and an on/off ratio of 5×10 2 [16].…”

Section: Introductionmentioning

confidence: 99%

P‐194: Late‐News Poster: Self‐Aligned Double‐Gate Cu‐MIC Poly‐Ge_1‐x Sn_x Thin‐Film Transistors on a Glass Substrate

Nishiguchi

Miyazaki

Utsumi

et al. 2018

Symp Digest of Tech Papers

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In this study, we fabricated p‐channel (p‐ch) poly‐Ge1‐x Snx thin‐film transistors (TFTs) on glass substrates using three key technologies. They are the self‐aligned double‐gate (DG) structure, metal‐induced crystallization using copper (Cu‐MIC), and aluminum‐induced lateral metallization source drain (Al‐LM‐SD). An amorphous Ge1‐x Snx film, which was prepared using a sputtering target with x=0.02 and 0.07, was crystallized by Cu MIC at 500 °C, and it was observed that Cu‐MIC enables us to fabricate a high‐quality poly‐Ge1‐x Snx thin film. The self‐aligned DG Cu‐MIC p‐ch poly‐Ge1‐x Snx TFTs, with x=0.02 and 0.07, achieved mobility of 18 and 25 cm2/Vs, respectively. Our proposed p‐ch TFT will facilitate fabrication of hybrid CMOS with n‐ch indium‐gallium‐zinc‐oxide TFT.

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Crystallization of amorphous Ge thin film using Cu nanoparticle synthesized and delivered by ferritin

Cited by 10 publications

References 26 publications

Four-terminal polycrystalline Ge_1−xSn _x thin-film transistors using copper-induced crystallization on glass substrates and their application to enhancement/depletion inverters

Four-terminal polycrystalline Ge_1−xSn _x thin-film transistors using copper-induced crystallization on glass substrates and their application to enhancement/depletion inverters

Improved Surface Quality of the Metal-Induced Crystallized Ge Seed Layer and Its Influence on Subsequent Epitaxy

P‐194: Late‐News Poster: Self‐Aligned Double‐Gate Cu‐MIC Poly‐Ge_1‐x Sn_x Thin‐Film Transistors on a Glass Substrate

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Crystallization of amorphous Ge thin film using Cu nanoparticle synthesized and delivered by ferritin

Cited by 10 publications

References 26 publications

Four-terminal polycrystalline Ge1−x Sn x thin-film transistors using copper-induced crystallization on glass substrates and their application to enhancement/depletion inverters

Four-terminal polycrystalline Ge1−x Sn x thin-film transistors using copper-induced crystallization on glass substrates and their application to enhancement/depletion inverters

Improved Surface Quality of the Metal-Induced Crystallized Ge Seed Layer and Its Influence on Subsequent Epitaxy

P‐194: Late‐News Poster: Self‐Aligned Double‐Gate Cu‐MIC Poly‐Ge1‐x Snx Thin‐Film Transistors on a Glass Substrate

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About

Four-terminal polycrystalline Ge_1−xSn _x thin-film transistors using copper-induced crystallization on glass substrates and their application to enhancement/depletion inverters

Four-terminal polycrystalline Ge_1−xSn _x thin-film transistors using copper-induced crystallization on glass substrates and their application to enhancement/depletion inverters

P‐194: Late‐News Poster: Self‐Aligned Double‐Gate Cu‐MIC Poly‐Ge_1‐x Sn_x Thin‐Film Transistors on a Glass Substrate