Crystallization behaviour of PZT in multilayer heterostructures

Воротилов, К. А.; Сигов, А. С.; Серегин, Д. С.; Podgorny, Yu. V.; Жигалина, О. М.; Хмеленин, Д. Н.

doi:10.1080/01411594.2013.794276

Cited by 32 publications

(30 citation statements)

References 17 publications

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“…16,17 Crystallization heat treatment was performed at 650 • C during 20 min. The films have typical columnar grain perovskite structure with mixed (111) and (100) texture.…”

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confidence: 99%

Estimation of steady-state leakage current in polycrystalline PZT thin films

2016

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Estimation of the steady state (or “true”) leakage current Js in polycrystalline ferroelectric PZT films with the use of the voltage-step technique is discussed. Curie-von Schweidler (CvS) and sum of exponents (Σexp) models are studied for current-time J (t) data fitting. Σexp model (sum of three or two exponents) gives better fitting characteristics and provides good accuracy of Js estimation at reduced measurement time thus making possible to avoid film degradation, whereas CvS model is very sensitive to both start and finish time points and give in many cases incorrect results. The results give rise to suggest an existence of low-frequency relaxation processes in PZT films with characteristic duration of tens and hundreds of seconds.

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“…16,17 Crystallization heat treatment was performed at 650 • C during 20 min. The films have typical columnar grain perovskite structure with mixed (111) and (100) texture.…”

mentioning

confidence: 99%

Estimation of steady-state leakage current in polycrystalline PZT thin films

2016

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“…Обычно при формировании пленок на поверхности Pt (111) или оксидов с близкими значениями постоянной решетки зародышеобразование на поверхности доминирует и обеспечивает характер-ную столбчатую структуру перовскитных (Pe) зерен с ориентацией в направлении (111) [2,9]. Для усиления текстуры Pe (100) обычно используют ориентирующие слои, обогащенные Pb или Ti, тaк как их оксидные фазы имеют близкие к Pe (100) параметры кристаллической решетки [9,[11][12][13][14][15][16][17].…”

Section: Introductionunclassified

“…Так, по мере увеличения избытка свинца в пленкообразующем растворе растет скорость гетерогенного зародышеобразования, в результате чего Pe зерна уменьшаются, а текстура постепенно меняет направление от (111) к (100) [13,18].…”

Section: Introductionunclassified

Влияние Кристаллической Структуры На Электрические Свойства Тонкопленочных PZT Структур

Delimova¹,

Гущина²,

Зайцева³

et al. 2018

Физика Твердого Тела

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В работе предложен и реализован новый метод двустадийной кристаллизации пленок цирконата-титаната свинца (PZT) с использованием затравочного подслоя с низким содержанием избыточного свинца. Из рас-творов с избытком свинца 0−5 wt% формируют затравочный слой с сильной текстурой зерен перовскита Pe (111), быстрый рост которых обеспечивается нанесением основной пленки из растворов с высоким содержанием свинца. В результате в пленках формируется сильная Pe (111) текстура с полным подавлением ориентации Pe (100). Анализ вольт-амперных зависимостей переходных токов и распределений локальной проводимости, измеренных методом контактной АСМ, выявил два различных механизма протекания токов, определяемыx ловушками в объеме и на границах раздела перовскитных зерен.Работа поддержана программой Минобрнауки РФ № 11.2259.2017/ПЧ (АС), грантом РФФИ № 16-02-00845 а (КВ, ДС).

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“…The phase composition of the films was analyzed with the help of a D2 PHASER X ray diffractometer (Bruker) using CuK α radiation. It is known that PZT films crystallize at temperatures above 550°C [24]. During the crystallization on Si substrates with the Pt (111) lower electrode, layers with a columnar structure of perovskite grains are formed due to the heteroge neous nucleation mechanism; the grains have orienta tion (111) or (100) depending on the preparation con ditions [24,25].…”

Section: Introductionmentioning

confidence: 99%

“…It is known that PZT films crystallize at temperatures above 550°C [24]. During the crystallization on Si substrates with the Pt (111) lower electrode, layers with a columnar structure of perovskite grains are formed due to the heteroge neous nucleation mechanism; the grains have orienta tion (111) or (100) depending on the preparation con ditions [24,25]. Platinum corresponds well to lattice parameters of PZT (lattice mismatch of 2.9% [26]), but such multilayer substrate is inconvenient for model investigations.…”

Section: Introductionmentioning

confidence: 99%

Electrodynamic properties of lead Zirconate-Titanate thin films in the terahertz frequency range

et al. 2014

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The transmission/reflection spectra of bilayer structures consisting of thin amorphous and poly crystalline Pb(Zr 0.52 Ti 0.48 )O 3 ferroelectric films deposited on dielectric substrates of magnesium oxide MgO and sapphire α Al 2 O 3 were measured in the frequency range of 5-4000 cm -1 . Based on these spectra and using the dispersion analysis method, the spectra of complex dielectric permittivity ε*(ν) and dynamic con ductivity σ'(ν) of the films were simulated, the electrodynamic parameters of the films were determined, and the dielectric dispersion responsible for the formation of static permittivity was found.

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Crystallization behaviour of PZT in multilayer heterostructures

Cited by 32 publications

References 17 publications

Estimation of steady-state leakage current in polycrystalline PZT thin films

Estimation of steady-state leakage current in polycrystalline PZT thin films

Влияние Кристаллической Структуры На Электрические Свойства Тонкопленочных PZT Структур

Electrodynamic properties of lead Zirconate-Titanate thin films in the terahertz frequency range

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