Crystallite orientation and the related photoresponse of hexagonal ZnO films deposited by r.f. sputtering

Studies of the optoelectronic properties of ZnO thin films

“…There are several reports on the studies of photoluminescence (PL) [10][11][12][13][14][15][16] and photoconductivity (PC) properties of ZnO films, [17][18][19][20][21][22] which are mainly focused either on the emission or on the UV photoresponse properties. It has been found that factors such as film thickness and grain size, 23 crystallographic orientation, 24 postdeposition annealing temperature and ambient, 19 doping effect with nitrogen, 25 presence of micropores, 23 and encapsulating layer 19 influence the emissions as well as photoresponse characteristics of ZnO. Thus, it would be very useful to investigate the PL and PC properties together to exploit the material for optoelectronic devices.…”

Structural and optical properties of Mg x Zn 1–x O thin films formed by sol–gel method

“…Moreover, ZnO has oxygen as its constituent atoms and is thought to be effective for rare earth doping and optical activation. In addition, polycrystalline ZnO films formed by laser deposition [2], sputtering [3] and sol-gel methods [4,5] are found to show relatively good optical properties and therefore they are expected as a good host for RE ions in both the visible and infrared emission regions.…”

On tuning the orientation of grains of spray pyrolysed ZnO thin films

“…Also the c-axis oriented films are having applications as shear wave transducer and SAW filters using Sezawa wave [14]. Only the film c-axis parallel to the substrate revealed photocurrent phenomena [15]. ZnO is a tetrahedral co-ordinated II-VI semiconductor and in thin films, grain growth is in (0 0 2) direction, as determined by the partial pressure of oxygen, type of deposition and substrate.…”