Abstract:In this paper, we report on the characterization of a set of MOCVD grown GaN
samples with a variety of structural or crystalline quality. X-ray diffraction (XRD) was used to
observe the change of the crystalline structure with deposition temperature. All results show that
the structure type of the GaN deposited films is sensitive to the growth temperature. Our results
also revealed that a good crystalline structure of GaN films could be grown at temperatures higher
than 600°C. Finally, a general picture on the… Show more
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