Aligned ZnO nanorods were synthesized on a polyethylene naphthalate (PEN) substrates using a chemical bath deposition method. The growth temperature and precursor concentration were 95 °C and 0.025 M, respectively. The effects of growth duration (2 h to 8 h) on the optical and structural properties of the obtained ZnO nanorods on seed layer ZnO/PEN substrate were then investigated using X-ray diffraction, field-emission scanning electron microscopy (FESEM), and photoluminescence (PL) spectroscopy at room temperature. The high intensity of (002) peak compared with (100) and (101) in the X-ray diffraction (XRD) pattern demonstrated that the ZnO nanorods grown for 6.5 h had more vertical higher crystal quality than the samples grown for other durations. The average diameter of ZnO nanorods grown on PEN substrates increased from 19 nm to 45 nm with increased growth duration from 2 h to 8 h, respectively.
In this study, current-voltage (I-V) measurements at room temperature (RT) of platinum (Pt) metal contact combine with n-Al0.08In0.08Ga0.84N thin film which grown epitaxially by molecular beam epitaxy (MBE) technique on sapphire substrate to form Schottky diode have been characterized. Schottky barrier heights of diode related with the high work function metal of Pt electrode was measured and investigated. Pt metal was fabricated using RF-sputtering technique. The effect of annealing temperature ranged from 300 °C to 600 °C on the structural and electrical properties has been studied. The results revealed that in spite of the various annealing temperature used there is no change in XRD diffraction peak observed in Pt contact. Furthermore, at 400 °C the best surface morphology was obtained and the value of SBH and ideality factor (n) was 0.76 eV and, 1.03 respectively. This concludes that at this annealing temperature Pt metal exhibited optimum (I-V) rectifying characteristics of Pt/Al0.08In0.08Ga0.84N Schottky diode.
In this paper, we studied growth of AlN/GaN/AlN on Si (111) by using plasma assisted molecular beam epitaxy (PA-MBE) system. The structural and optical characteristics of the sample have been investigated by using high resolution X-ray diffraction (HR-XRD), Raman spectroscopy and photoluminescence (PL). PL spectrum of the sample has shown sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good crystal quality of the sample. The silver (Ag) metal contact was then deposited on the sample followed by thermal treatment at 500°C and 700°C, respectively. Treated sample at 700°C showed good spherical Ag islands on sample compared to the treated sample at 500°C. The effect of Ag islands on the electrical characteristics of sample was also examined by usingI-Vmeasurement. The results showed that the treated sample at 700°C has decreased the photo-current of Schottky diode.
In the current work p-Pb0.925Yb0.075Te:Te and n-Pb0.925Yb0.075Se0.2Te0.8 powders synthesized by solid-state microwave route were used to fabricating thermally evaporated thin films. The micro-thermoelectric devices were composedof 20-pairs and 10-pairs p-Pb0.925Yb0.075Te:Te and n-Pb0.925Yb0.075Se0.2Te0.8 thin films on glass substrates. Overall size of the thin films thermoelectric generators which consist of 20-pairs and 10-pairs of legs connected by aluminumelectrodes were 23 mm×20 mm and 12 mm×10 mm, respectively. The 20-pairs p–n thermocouples in series device generated output maximum open-circuit voltage of 275.3 mV and a maximum output power up to 54.4 nW at temperature difference ∆T= 162 K, and 109.4 mV and 16.7 nW at ∆T=162 K, for 10-pairs, respectively.
This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as grown GaN. The samples were investigated by scanning electron microscopy (SEM), high resolution x-ray diffraction (HRXRD), and photoluminescence (PL). The porous area is very uniform, with pore diameter in the range of 80-110 nm. XRD measurements showed that the (0002) diffraction plane peak width of porous samples was slightly broader than the as-grown sample. PL measurements revealed that the near band edge peak of the porous samples were redshifted. Metal-semiconductor-metal (MSM) photodiode was fabricated on the samples. For as grown GaN sample, this detector shows a sharp cut-off wavelength at 362 nm. A maximum responsivity of 0.258 A/W was achieved at 360 nm. For the porous GaN sample, this detector shows a sharp cut-off wavelength at 364 nm. A maximum responsivity of 0.771 A/W was achieved at 363 nm.
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