Crystallinity of pure silica glass studied by positron annihilation

Bräuer, G.; Boden, G.; Balogh, Adam G.; Andreeff, A.

doi:10.1007/bf00885117

Cited by 18 publications

(5 citation statements)

References 8 publications

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“…The residuals of the fit were perfect when using 3 lifetime components. The very same sample was measured 30 years ago in the same institute by conventional lifetime spectroscopy [5]. The results were similar (151 ps, 523 ps, and 1.57 ns).…”

Section: Measurement Of Liquids and Large Samplessupporting

confidence: 71%

Progress of the EPOS project: Gamma‐induced Positron Spectroscopy (GiPS)

Krause‐Rehberg

Anwand

Bräuer

et al. 2009

Phys. Status Solidi (c)

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A long sought after target in materials research has been the synthesis of high quality, optically transparent, electrically conductive thin films that simultaneously provide large surface area and nanocrystalline mesoporosity. , Geoff Ozin and co‐workers report a dye‐anchored transparent, well‐ordered mesoporous antimony‐doped tin oxide film that functions as the working electrode in an electrochemiluminescent cell, suggesting opportunities for use in a range of optoelectronic applications.

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Section: Measurement Of Liquids and Large Samplessupporting

confidence: 71%

Progress of the EPOS project: Gamma‐induced Positron Spectroscopy (GiPS)

Krause‐Rehberg

Anwand

Bräuer

et al. 2009

Phys. Status Solidi (c)

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“…30 The second possible positron annihilation route in SRSO could be related to Si precipitation and the formation of defect sites located at the Si/SiO 2 interfaces such as voids, E 0 centers ( Si•, where the "" symbol stands for Si bonding with three O atoms), P b centers (Si 3 Si•), peroxy radicals (Si À O À O•), and non-bridging O hole centers (NBOHC) (Si À O•). 31,32 Nevertheless, in order to get a detailed picture of the nature of positron trapping states, more precise depth-resolved positron annihilation measurements (using variable energy positron beam) must be performed. The absence of a dependence of k À1 rate on the Si concentration does not exclude the creation of new defects, but suggests that these defects are not sensitive to the PALS technique.…”

Section: Resultsmentioning

confidence: 99%

Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?

Podhorodecki

Golacki

Zatryb

et al. 2014

Journal of Applied Physics

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In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.

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“…The exception of Ge is in agreement with the higher positron affinity of Ge compared to SiO 2 . The Brazilian quartz used here for comparison has already been characterized in more detail [13].…”

Section: Resultsmentioning

confidence: 99%

“…The crystalline parts of the Ge + and Er + implanted samples were calculated using the equation given in Ref. 13. Results are shown in Fig.…”

Section: S Parametermentioning

confidence: 99%

Structural Characterisation of Er Implanted, Ge-Rich SiO<sub>2</sub> Layers Using Slow Positron Implantation Spectroscopy

Anwand¹,

Kanjilal

Bräuer³

et al. 2010

MSF

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Electroluminescence in SiO2 layers can be created by Ge implantation and a subsequent heat treatment, leading to the formation of Ge nano-particles inside the SiO2. An additional implantation of Er, connected with a further annealing, can lead to an improvement of the luminescent properties. However, the intensity of electroluminescence was found to decrease drastically after exceeding an optimum concentration of the Er doping. Slow positron implantation spectroscopy (SPIS), both in single (DB) and coincidence (CDB) Doppler broadening mode, was applied to probe processes at a microscopic level which might have an impact on the optical response. It shows that the increasing intensity of the electro-luminescence is connected with a crystalline structure of the SiO2 covering the nano-particles and also with the improved reverse energy transfer process between Er and Ge.

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Crystallinity of pure silica glass studied by positron annihilation

Cited by 18 publications

References 8 publications

Progress of the EPOS project: Gamma‐induced Positron Spectroscopy (GiPS)

Progress of the EPOS project: Gamma‐induced Positron Spectroscopy (GiPS)

Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?

Structural Characterisation of Er Implanted, Ge-Rich SiO<sub>2</sub> Layers Using Slow Positron Implantation Spectroscopy

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