2008
DOI: 10.1016/j.apsusc.2008.05.339
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Crystalline morphologies of P(VDF-TrFE) (70/30) copolymer films above melting point

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Cited by 40 publications
(34 citation statements)
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“…When annealing temperature is up to 180 • C, more than melting temperature, the rods get longer and tapered. If the annealing temperature becomes 200 • C, the P(VDF-TrFE) copolymers thin films show separate islands in morphology due to the fluid flow of crystal, which corresponds to nearly melting state [16]. Figure 4 shows C-V characteristics of the Al/P(VDF-TrFE)/Si(100) and Al/P(VDF-TrFE)/Pt/Ti/SiO 2 /Si(100) structures annealed at 140 • C. The C-V hysteresis, indicated by the arrows, shows that the capacitance changes from the accumulation to the inversion states, and that the memory window of the loop is about 5 V under a bias condition.…”
Section: Resultsmentioning
confidence: 99%
“…When annealing temperature is up to 180 • C, more than melting temperature, the rods get longer and tapered. If the annealing temperature becomes 200 • C, the P(VDF-TrFE) copolymers thin films show separate islands in morphology due to the fluid flow of crystal, which corresponds to nearly melting state [16]. Figure 4 shows C-V characteristics of the Al/P(VDF-TrFE)/Si(100) and Al/P(VDF-TrFE)/Pt/Ti/SiO 2 /Si(100) structures annealed at 140 • C. The C-V hysteresis, indicated by the arrows, shows that the capacitance changes from the accumulation to the inversion states, and that the memory window of the loop is about 5 V under a bias condition.…”
Section: Resultsmentioning
confidence: 99%
“…Results indicate the coercive electric field is E c ¼ 0.4 MV/cm, in well agreement with the reported values. [1][2][3][4][5] For the C60:Au MISM capacitors (ITO/P(VDFTrFE)/C60/Au), two DCM peaks are generated asymmetrically, at À35.5 V (peak 1) in the process 0 ! ÀV m and at þ30.0 V (peak 2) in the process 0 !…”
Section: Resultsmentioning
confidence: 99%
“…INTRODUCTION Ferroelectric polymers are widely used as memory materials, where copolymer of vinylidene fluoride (VDF) and trifluoroethylene (TrFE), P(VDF-TrFE) stands out as its bistable and remanent polarization that can be repeatedly turn-over by an external electric field. [1][2][3][4][5] Recently, ferroelectric polymers have also been used in electronic devices such as organic field effect transistors (OFETs) [6][7][8] and organic photovoltaic cells (OPVs), [9][10][11] where a strong internal electric field induced in the active layer of these devices by spontaneous polarization of ferroelectric polymers is well utilized for efficient device operations. As a result, carrier behaviors in the active semiconductor layer, e.g., pentacene, have been deeply studied in terms of the turn-over of spontaneous polarization of ferroelectric layer.…”
mentioning
confidence: 99%
“…The lower temperature peak corresponds to the melting temperature of PEO, around 55°C-68°C [52] depending on PEO content, and the higher temperature ones correspond to P(VDF-TrFE): the one at~117°C corresponds to the ferroelectric-paraelectric transition (FE-PE, Curie transition) and the one around 145°C corresponds to the melting of the paraelectric phase [53].…”
Section: Microstructure Polymer Phase and Thermal Propertiesmentioning
confidence: 99%