1960
DOI: 10.1063/1.1731237
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Crystal Structure of β-Ga2O3

Abstract: The crystal structure of β-Ga2O3 has been determined from single-crystal three-dimensional x-ray diffraction data. The monoclinic crystal has cell dimensions a=12.23±0.02, b=3.04±0.01, c=5.80±0.01 A and β=103.7±0.3° as originally reported by Kohn, Katz, and Broder [Am. Mineral. 42, 398 (1957)]. There are 4 Ga2O3 in the unit cell. The most probable space group to which the crystal belongs is C2h3—C2/m; the atoms are in five sets of special positions 4i: (000, ½½0)±(x0z). There are two kinds of coordination for … Show more

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Cited by 856 publications
(415 citation statements)
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“…A BaF 2 6-detector PAC setup was used [17], but when measuring single crystals only one 4-detector plane of this setup was selected, where the sample's c-axis was oriented within the detector plane at The lattice parameters of the Ga 2 O 3 powder samples and nanowires were previously found to be "relaxed" [18], i.e., with standard bulk parameters, thus the values a = 12.23Å, b = 3.08Å, c = 5.80Å and = 107.3 o , reported in ref. [10], were considered, which are in agreement with the optimum estimated atomic positions and lattice parameters found in the theoretical study of Ga 2 O 3 done by F. Litimein et al [19].…”
Section: Technical Detailssupporting
confidence: 80%
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“…A BaF 2 6-detector PAC setup was used [17], but when measuring single crystals only one 4-detector plane of this setup was selected, where the sample's c-axis was oriented within the detector plane at The lattice parameters of the Ga 2 O 3 powder samples and nanowires were previously found to be "relaxed" [18], i.e., with standard bulk parameters, thus the values a = 12.23Å, b = 3.08Å, c = 5.80Å and = 107.3 o , reported in ref. [10], were considered, which are in agreement with the optimum estimated atomic positions and lattice parameters found in the theoretical study of Ga 2 O 3 done by F. Litimein et al [19].…”
Section: Technical Detailssupporting
confidence: 80%
“…Thus, in this study, thin films of ZnO and Cd x Zn 1 x O (x = 0.16) were investigated. Gallium oxide (Ga 2 O 3 ) has the biggest band-gap among the transparent conductive oxides, 4.8 eV , making it interesting for photonics working in the UV and visible wavelength region [3,[10][11][12][13]. However, as in the case of ZnO, it is an intrinsic n-type semiconductor and it has been proven very difficult to obtain p-type doping, which is fundamental for technological applications.…”
Section: Case Studiesmentioning
confidence: 99%
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“…However, the peak intensity of the low transition energy (10373 eV) is higher than that of the high transition energy (10378 eV) 28) . It is known that β-Ga2O3 is the only stable phase 29) and it includes two kinds of Ga, tetrahedral Ga and octahedral Ga, in its structure 30) . Thus, we calculated spectra of tetrahedral Ga and octahedral Ga shown in Fig.…”
Section: Xanesmentioning
confidence: 99%
“…[197,198]. The structure of β-Ga 2 O 3 is monoclinic with a space group of C 2/m , and Ga 3+ ions occupy two crystallographic sites, namely tetrahedral and octahedral, respectively [199]. (Fig.…”
Section: Sm 3+mentioning
confidence: 99%