Crystal structure analysis and thermoelectric properties of p-type pseudo-binary (Al2Te3)x–(Bi0.5Sb1.5Te3)1−x (x=0∼0.2) alloys prepared by spark plasma sintering

Thermoelectric properties of p-type Pb-doped Bi85Sb15−xPbx alloys at cryogenic temperatures

“…This is because the ambipolar contribution arising from the diffusion of electron-hole pairs with the onset of intrinsic contribution, which is consistent with results in Ref. [32]. The lattice thermal conductivity of Pb doped Bi 85 Sb 15−x Pb x samples is lower than that of the un-doped Bi 85 Sb 15 sample, which can be attributed to the mass-fluctuation scattering between dopant Pb (atomic mass M Pb ≈ 207) and Sb (atomic mass M Sb ≈ 122).…”

Composites of Bi2–Sb Te3 nanocrystals and fullerene molecules for thermoelectricity

“…The energy difference between the conduction band minima were taken equal to 29 mV on the basis of the tunneling spectroscopy data. The density, sound velocity and the Debye temperature of all materials were taken equal to 6900 kg/m 3 [21], 2500 m/s and 160 K respectively as in Bi 2 Te 3 . The other parameters used in calculations were varied to fit the experimental data.…”

Synthesis and characterization of Bi2Te3 nanotubes by a hydrothermal method

“…The performance of thermoelectric materials is characterized by the dimensionless figure-of-merit, ZT =˛2 T/Ä, whereį s the Seebeck coefficient, is the electrical conductivity, T is the absolute temperature and Ä is the total thermal conductivity with contributions from the lattice (Ä L ) and the electrons (Ä e ). Considerable efforts have been devoted to improving the thermoelectric properties of Bi 2 Te 3 -based alloys during the past decades [5][6][7][8][9][10][11][12][13]. Theoretical calculations and experimental results have demonstrated that low-dimensional thermoelectric materials, such as superlattices (2D structures) [14], nanowires (1D structures) [15][16][17][18][19], and quantum dots (0D structures) [20,21], have a higher ZT due to quantum confinement effects caused by the change in the density of electronic states as a function of material dimension as well as the increase of phonon scattering [22][23][24][25].…”