Thermoelectric properties of p-type Pb-doped Bi85Sb15−xPbx alloys at cryogenic temperatures

Enhanced thermoelectric properties of hydrothermally synthesized Bi0.88−xZnxSb0.12 nanoalloys below the semiconductor–semimetal transition temperature

“… 48 For comparison with other similar bismuth antimony alloy systems, a maximum value of z T ≈ 0.23 was attained for Sn-doped (Bi 85 Sb 15 ) 1− x Sn x with x = 0.00 fabricated using pressureless sintering techniques; 49 a maximum value of zT ≈ 0.26 was attained at 260 K for (Bi 85 Sb 15 ) 1− x Pb x with x = 0.00 fabricated using mechanical alloying in combination with pressureless sintering. 50 For Bi 85 Sb 13 Nb 2 fabricated using high-press sintering, a maximum of zT = 0.36 was attained at 200 K. 40 It should be noted that zT > 1 could be attained for Bi–Sb–Te alloys around room temperature. 51,52 …”

“…48 For comparison with other similar bismuth antimony alloy systems, a maximum value of zT z 0.23 was attained for Sn-doped (Bi 85 Sb 15 ) 1Àx Sn x with x ¼ 0.00 fabricated using pressureless sintering techniques; 49 a maximum value of zT z 0.26 was attained at 260 K for (Bi 85 -Sb 15 ) 1Àx Pb x with x ¼ 0.00 fabricated using mechanical alloying in combination with pressureless sintering. 50 For Bi 85 Sb 13 Nb 2 fabricated using high-press sintering, a maximum of zT ¼ 0.36 was attained at 200 K. 40 It should be noted that zT > 1 could be attained for Bi-Sb-Te alloys around room temperature. 51,52 The downturn temperature dependence of the electrical conductivity around room temperature is attributed to semiconductor-semimetal transition, which is observed for all the alloys except the x ¼ 0.15 alloy sintered at 170 C. For the effects of Zn doping, the power factors are enhanced for all Bi 0.88Àx -Zn x Sb 0.12 alloys, except that for the x ¼ 0.15 alloy.…”

Recent progress of cryogenic thermoelectric materials

“…reported that Z value of Bi-Sb alloys increased to 1.79×10 −3 K −1 at 196 K through partial substitution of Nb for Sb [41] . The n-type electrical transport behavior translated into p-type by doping Ge in BiSb and the maximum z value was 0.5×10 −3 K −1 at 140 K [42,43] . P-type Bi-Sb based alloys have been obtained by doping Pb or Sn at Sb site [40,44] .…”

Magnetism Modulation for Cryogenic Thermoelectric Enhancements in Fe3O4 Nanoparticle-Incorporated Bi0.85Sb0.15 Nanocomposites

“…However, the Bi–Sb single crystal is difficult to use for commercial purposes due to its poor mechanical properties. In the last decade, many efforts have been made to improve the TE performance of Bi–Sb polycrystalline materials, including tuning the carrier concentration, − resonance level, texturing, and nanostructuring. , Among these strategies, constructing nanostructured Bi–Sb materials has attracted much attention of researchers. The Bi–Sb nanowires and nanofilms can obtain a high PF due to the improvement of S caused by the quantum confinement effect.…”