Crystal Quality Effect on Low-Frequency Noise in ZnO TFTs

Jeong, Kwang‐Seok; Kim, Yumi; Yun, Ho‐Jin; Yang, Seung‐Dong; Kim, Young-Su; Kang, Min-Ho; Lee, Hi‐Deok; Lee, Ga‐Won

doi:10.1109/led.2011.2167312

Cited by 21 publications

(13 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, poly-Si TFTs may be varied from bulk dominated devices to interface dominated devices with decreasing channel length. Moreover, the improvement of crystal quality in the short channel devices may also be an occasion of this phenomenon [27]. The above findings may result in the modification of the law followed by S ID /I 2 ds against V gs − V th with decreasing channel length.…”

Section: Low Frequency Noise Characteristicsmentioning

confidence: 88%

“…4, the reduction of channel length may lead to a modification of the slope of S ID /I 2 ds against V gs −V th from −1 to −2. These phenomena may be caused by the variation of the origin of flicker noise [4], [14], [27]. The presence of bulk defects in the grain boundary is essential in long channel devices, and it may push the bulk effect noise to be the predominant origin of the whole noise.…”

Section: Low Frequency Noise Characteristicsmentioning

confidence: 99%

“…The presence of bulk defects in the grain boundary is essential in long channel devices, and it may push the bulk effect noise to be the predominant origin of the whole noise. However, in the short channel devices, the quality of Si/SiO 2 interface is crucial, and the carrier number fluctuation induced by trapping/detrapping of free carriers becomes more important [4], [14], [27]. Thus, poly-Si TFTs may be varied from bulk dominated devices to interface dominated devices with decreasing channel length.…”

Section: Low Frequency Noise Characteristicsmentioning

confidence: 99%

See 2 more Smart Citations

Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors

Liu

Cai

Han

et al. 2019

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

Scaling down effects on conduction and low frequency noise characteristics are investigated in a set of p-type polycrystalline silicon thin-film transistors (poly-Si TFTs) with fixed channel width (W=8 μm) and different channel lengths (L=2, 4, 8, 12, and 20 μm). First, short channel effects on threshold voltage, field effect mobility, and sub-threshold swing are examined, while the presence of contact may induce to the degradation of field effect mobility in the short channel devices. Subsequently, the drain current noise power spectral densities are measured at varied effective gate voltages and drain currents. The slopes of normalized noise against effective gate voltage are varied from −1.1 to −2 with decreasing channel length, which indicates that poly-Si TFTs varied from bulk dominated devices to interface dominated devices. Based on N-μ model, the flat-band voltage noise spectral density and coulomb scattering coefficient are extracted. Therefore, measured normalized noises are simulated by considering of contact resistance. Finally, short channel effects on some noise parameters (such as Hooge's parameter, etc.) are studied and discussed.

show abstract

Section: Low Frequency Noise Characteristicsmentioning

confidence: 88%

Section: Low Frequency Noise Characteristicsmentioning

confidence: 99%

Section: Low Frequency Noise Characteristicsmentioning

confidence: 99%

See 1 more Smart Citation

Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors

Liu

Cai

Han

et al. 2019

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

show abstract

“…In addition, it is also strong dependent on the technologies, for example, annealing temperature and passivation technologies 7,17 . For further investigation of low frequency noise in these poly-Si TFTs, the normalized current noise power spectral versus channel current (I ds ) is shown in Fig.…”

Section: Analysis Of Low Frequency Noise Characteristics In P-type Pomentioning

confidence: 99%

“…6 In many cases, the noise levels are sensitive to the active layer and/or the gate insulator quality. 7 In general, the noise levels in the devices with amorphous or polycrystalline materials are higher than the levels observed in crystalline MOS like transistors. 8 In the n-channel poly-Si TFTs, noise usually shows a 1/f γ law with doped or undoped active layer.…”

Section: Introductionmentioning

confidence: 99%

Analysis of low frequency noise characteristics inp-type polycrystalline silicon thin film transistors

Liu

Fang

2017

Mod. Phys. Lett. B

View full text Add to dashboard Cite

Low frequency noises in the p-type polycrystalline silicon thin film transistors are investigated. It shows a pure 1/f γ (with γ near one) noise behavior which can be explained by emission and trapping processes of carriers between trapping states. Subsequently, the gate voltage-dependent drain current noise power spectral densities closely follow the mobility fluctuation model, and the average Hooge's parameter is then extracted. By considering traditional tunneling processes, the flat-band voltage spectral density is extracted and the concentration of traps in the grain boundary is calculated to be 7.17×10 20 cm −3 eV −1 . By converting the frequency to tunneling depth of carriers in the gate oxide, the spatial distribution of gate oxide trapped charges are obtained. Finally, the distribution of localized states in the energy band is extracted. The experimental results show an exponential deep states and tail states distribution in the band gap while N DD is about 1.5 × 10 20 cm −3 eV −1 , T DD is ∼ 617 K, N TD is ∼ 3.6 × 10 21 cm −3 eV −1 and T TD is ∼ 265 K.

show abstract

Nanoscale reduction of resistivity and charge trap activities induced by carbon nanotubes embedded in metal thin films

Shin

Kim

Shekhar

et al. 2019

Carbon

View full text Add to dashboard Cite

Crystal Quality Effect on Low-Frequency Noise in ZnO TFTs

Cited by 21 publications

References 18 publications

Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors

Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors

Analysis of low frequency noise characteristics inp-type polycrystalline silicon thin film transistors

Nanoscale reduction of resistivity and charge trap activities induced by carbon nanotubes embedded in metal thin films

Contact Info

Product

Resources

About