Crystal Orientation Dependence of Piezoelectric Properties in Lead    Zirconate Titanate: Theoretical Expectation for Thin Films

Du, Xiangwei; Belegundu, Uma; Uchino, Kenji

doi:10.1143/jjap.36.5580

Cited by 174 publications

(102 citation statements)

References 5 publications

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“…The relative dielectric constant is known to be higher for the (100)-oriented film than for the (111)-oriented film. 16,17 These results are in good agreement with the theoretical expectations and also show fairly good values, which are comparable with the results obtained from dense PZT films deposited using a multiple sol-gel-coating process 18 or reactive radio frequency sputtering. 19 The piezoelectric properties of the PZN-PZT thick films were measured using B4.0 mm thick PZN-PZT films (deposited six times) deposited by a 1:10 diol solution, and pyrolyzed and annealed at B2501 and 7001C, respectively.…”

Section: Resultssupporting

confidence: 88%

Sol–Gel Preparation of Thick PZN–PZT Film Using a Diol‐Based Solution Containing Polyvinylpyrrolidone for Piezoelectric Applications

Choi

Park

Lee

et al. 2005

Journal of the American Ceramic Society

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Dense and crack-free lead zinc niobate-lead zirconate titanate (PZN-PZT) films were deposited on silicon and glass substrates by spin coating using a sol containing propanediol and polyvinylpyrrolidone. Single-layer PZN-PZT films as thick as 0.80 lm were deposited by a single spin coating with successive heat treatments at 2501 and 7001C. After heat treatment, the films were dense, crack free, and optically transparent. In addition, the crystallographic orientation of the thick film was controllable by adjusting the heat-treatment conditions. The ferroelectric properties of the (111)-oriented film were superior to those of the (100)-oriented film. On the other hand, the piezoelectric and dielectric properties of the (100)-oriented film were better than those of the (111)

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Section: Resultssupporting

confidence: 88%

Sol–Gel Preparation of Thick PZN–PZT Film Using a Diol‐Based Solution Containing Polyvinylpyrrolidone for Piezoelectric Applications

Choi

Park

Lee

et al. 2005

Journal of the American Ceramic Society

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“…5 However, if there is an angle between normal to the film plane and the polarization vector, the effective piezoelectric coefficient d zz measured in VPFM is not equal to d 33 nor is it proportional to spontaneous polarization. [19][20][21][22][23] This is especially a concern when dealing with polycrystalline ferroelectric thin films with randomly oriented grains or with polarization fixed at an angle from the direction normal to the surface.…”

Section: Methodsmentioning

confidence: 99%

Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy

Rodriguez

Gruverman

Kingon

et al. 2004

Journal of Applied Physics

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Nemanich, R. J.; and Cross, J. S., "Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy" (2004 A combination of vertical and lateral piezoresponse force microscopy ͑VPFM and LPFM, respectively͒ has been used to map the out-of-plane and in-plane polarization distribution, respectively, of ͑111͒-oriented Pb(Zr,Ti)O 3 -based ͑PZT͒ ferroelectric patterned and reactively-ion-etched capacitors. While VPFM and LPFM have previously been used to determine the orientation of the polarization vector in ferroelectric crystals and thin films, this is the first time the technique has been applied to determine the three-dimensional polarization distribution in thin-film capacitors and, as such, is of importance to the implementation of nonvolatile ferroelectric random access memory. Sequential VPFM and LPFM imaging have been performed in poled 1 ϫ1.5 m 2 PZT capacitors. Subsequent quantitative analysis of the obtained piezoresponse images allowed the three-dimensional reconstruction of the domain arrangement in the PZT layers of the capacitors. It has been found that the poled capacitors, which appear as uniformly polarized in VPFM, are in fact in a polydomain state as is detected by LPFM and contain 90°domain walls. Despite the polycrystallinity of the PZT layer, regions larger than the average PZT grain size are found to have the same polarization orientation. This technique has potential for clarifying the switching behavior and imprint mechanism in micro-and nanoscale ferroelectric capacitors.

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“…This technique has been used in an exhaustive manner to understand nanoscale ferroelectric domain structure, 3-9 polarization relaxation, 10-14 domain-wall creep, 15 piezoelectric properties, [16][17][18][19][20] scaling effects, 17,21,22 reliability issues, 23,24 and properties of individual grains. 25 Although there are reports that correlate piezoresponse of the ferroelectric thin film to the possible crystallographic orientations, 7,26,27 there is scarce information on how the crystallography of each individual grain affects the polarization relaxation. In this letter, we use the technique of PFM, first to identify polar axis-and nonpolar axis-oriented grains, and then further study the polarization relaxation of such individual grains.…”

mentioning

confidence: 99%

“…Figure 1͑a͒ is a plot of the effective out-of-plane piezoelectric coefficient ͑d zz ͒ as a function of the angle of deviation between the polar axis and the film surface normal. The exact correlation for a tetragonal system between the d zz and the d 33 is given as: 26,27 …”

mentioning

confidence: 99%

Nanoscale polarization relaxation in a polycrystalline ferroelectric thin film: Role of local environments

Valanoor

Aggarwal

Gruverman

et al. 2005

Applied Physics Letters

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In this letter, we report on the study of nanoscale polarization relaxation phenomena in polycrystalline PbZr0.4Ti0.6O3 films. Piezoresponse force microscopy (PFM) images of the as-grown sample reveal grains with a range of contrast, from fully white to gray to fully black. It is shown that this local change in the contrast (magnitude) of the piezoresponse from grain to grain can be attributed to the crystallographic orientation within each grain. PFM-based relaxation experiments show that the rate of relaxation is different for each grain, furthermore it is strongly dependent on the tilt of individual crystallographic orientation with respect to the polar axis. Strongly tilted away nonpolar axis grains show a much stronger decay of the polarization compared to polar axis-oriented grains. Therefore, for an ensemble of grains under a common top electrode, the relaxation events would first take place in grains, which are nonpolar axis oriented.

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Crystal Orientation Dependence of Piezoelectric Properties in Lead Zirconate Titanate: Theoretical Expectation for Thin Films

Cited by 174 publications

References 5 publications

Sol–Gel Preparation of Thick PZN–PZT Film Using a Diol‐Based Solution Containing Polyvinylpyrrolidone for Piezoelectric Applications

Sol–Gel Preparation of Thick PZN–PZT Film Using a Diol‐Based Solution Containing Polyvinylpyrrolidone for Piezoelectric Applications

Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy

Nanoscale polarization relaxation in a polycrystalline ferroelectric thin film: Role of local environments

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