Crystal growth of GaN by the reaction between gallium and ammonia

Elwell, D.; Feigelson, Robert S.; Simkins, M.M.; Tiller, W. A.

doi:10.1016/0022-0248(84)90075-7

Cited by 86 publications

(50 citation statements)

References 9 publications

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“…GaN has generally been formed by heating Ga, Ga 2 O 2 , or gallium halides at elevated temperatures ͑Ͼ750 K͒ in an ammonia atmosphere for extended periods. [5][6][7][8] The materials produced are often poorly crystalline, contain impurities, and/or show weak photoluminescence. Other recent synthetic methods use polymeric and single-source precursors, microwave heating, and plasma assisted nitridation.…”

mentioning

confidence: 99%

Solid-state metathesis reactions under pressure: A rapid route to crystalline gallium nitride

Wallace¹,

Kim²,

Rose³

et al. 1998

Applied Physics Letters

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High pressure chemistry has traditionally involved applying pressure and increasing temperature until conditions become thermodynamically favorable for phase transitions or reactions to occur. Here, high pressure alone is used as a starting point for carrying out rapid, self-propagating metathesis reactions. By initiating chemical reactions under pressure, crystalline phases, such as gallium nitride, can be synthesized which are inaccessible when initiated from ambient conditions. The single-phase gallium nitride made by metathesis reactions under pressure displays significant photoluminescence intensity in the blue/ultraviolet region. The absence of size or surface-state effects in the photoluminescence spectra show that the crystallites are of micron dimensions. The narrow lines of the x-ray diffraction patterns and scanning electron microscopy confirm this conclusion. Brightly luminescent thin films can be readily grown using pulsed laser deposition.

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confidence: 99%

Solid-state metathesis reactions under pressure: A rapid route to crystalline gallium nitride

Wallace¹,

Kim²,

Rose³

et al. 1998

Applied Physics Letters

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“…In some cases, the wetting was so extreme that the entire melt left the well of the crucible and formed solid nitride on the upper surfaces of the crucible [11]. This "spreading-wetting" phenomenon is a striking feature of group III metal/nitrogen melts and has been observed in Ga/N and Al/N systems by several prior investigators [12][13][14][15]. In order to promote controlled, oriented nucleation of the solid nitride from the melt, we introduce a substrate.…”

Section: Introductionmentioning

confidence: 82%

Growth of Oriented Thick Films of Gallium Nitride from the Melt

Dyck

Kash

Grossner

et al. 1999

MRS Internet j. nitride semicond. res.

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While significant strides have been made in the optimization of GaN-based devices on foreign substrates, a more attractive alternative would be homoepitaxy on GaN substrates. The primary motivation of this work is to explore the growth of thick films of GaN from the melt for the ultimate use as substrate material. We have previously demonstrated the synthesis of polycrystalline, wurtzitic gallium nitride and indium nitride by saturating gallium metal and indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Here we report the growth of thick oriented GaN layers using the same technique by the introduction of (0001) sapphire into the melt to serve as a substrate. The mechanism of this growth is not established, but may involve transport of the metal as a liquid film onto the sapphire and subsequent reaction with atomic nitrogen. The films were characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. X-ray diffraction showed that the GaN films were oriented with their c-axes parallel to the sapphire c-axis. The TEM analysis confirmed the orientation and revealed a dislocation density of approximately 10 10 cm -2 . The E 2 Raman active phonon modes were observed in the GaN films.

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“…For GaN nanowire synthesis, the temperature in the oven was varied between 850-900 'C for 3-4 hrs. GaN is formed through the reaction [11],…”

Section: Introductionmentioning

confidence: 99%

Structural Characterization of GaN Nanowires Fabricated via Direct Reaction of Ga Vapor and Ammonia

Jacobs

Salamanca‐Riba

et al. 2001

MRS Proc.

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We report structural studies of large-scale wurtzite GaN nanowires fabricated by direct reaction of Ga vapor and NI3. This recently reported growth technique [1] demonstrates processing of GaN one-dimensional structures as thin as 26 nm and up to 500 gm in length. This method is both interesting and attractive in that fabrication is carried out without the assistance of template materials as required by other methods. In this study, transmission electron microscopy (TEM) is used to characterize the nanowires, while x-ray diffraction (XRD) and energy dispersive x-ray spectroscopy (EDS) data provide supporting structural/compositional analysis. Our structural investigation reveals the presence of thin hexagonal platelets, which we believe play a critical role in the nucleation, growth, and orientation of the wires. In particular, our findings indicate that most of the wires grow along the [ 2110 ] direction, normal to the platelet edges.

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Crystal growth of GaN by the reaction between gallium and ammonia

Cited by 86 publications

References 9 publications

Solid-state metathesis reactions under pressure: A rapid route to crystalline gallium nitride

Solid-state metathesis reactions under pressure: A rapid route to crystalline gallium nitride

Growth of Oriented Thick Films of Gallium Nitride from the Melt

Structural Characterization of GaN Nanowires Fabricated via Direct Reaction of Ga Vapor and Ammonia

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