Crystal growth of Bi2Te3 and noble cleaved (0001) surface properties

Atuchin, Victor V.; Golyashov, V. A.; Кох, К. А.; Корольков, И. В.; Кожухов, А. С.; Кручинин, В. Н.; Loshkarev, I. D.; Pokrovsky, L.D.; Prosvirin, Igor P.; Romanyuk, Konstantin; Tereshchenko, O. E.

doi:10.1016/j.jssc.2015.07.031

Cited by 32 publications

(22 citation statements)

References 80 publications

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“…To further confirm the characteristics of the BP crystals, selected area electron diffraction (SAED) was conducted ( Figure 1e, upper right inset of Figure 1d), which demonstrated the excellent crystallization of the corresponding materials. As reported previously, both high purity and good crystallinity are extremely important for keeping BP stable in air [24][25][26].…”

Section: Synthesis Of High-quality Bp Single Crystalsmentioning

confidence: 59%

High-Quality Black Phosphorus Quantum Dots Fabricated via Microwave-Tailored Technology

Deng

et al. 2020

Nanomaterials

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Black phosphorus quantum dots (BPQDs) have recently obtained great attention due to their high mobility and tunable bandgap features, which are beneficial for their potential application in photoelectronic devices. However, a precise synthesis of high-quality BPQDs is still a great challenge owing to the formation of an impurity phase when employing traditional methods. Herein, we demonstrate the scalable fabrication of BPQDs from mineralization-derived bulk black phosphorus (BP) single crystals by means of a microwave (MW)-assisted liquid-phase exfoliation method in ethanol. The primary results demonstrate that ethanol plays a crucial role in determining the final properties of BPQDs, such as their excellent tolerance to oxygen, good crystallinity, and uniform size. Furthermore, the mechanism behind the formation of BPQDs is proposed, revealing that a layer-by-layer disintegration process of bulk BP crystals under microwave-energy stimuli is responsible. This work may provide a novel path for the further development of BPQDs and corresponding devices.

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Section: Synthesis Of High-quality Bp Single Crystalsmentioning

confidence: 59%

High-Quality Black Phosphorus Quantum Dots Fabricated via Microwave-Tailored Technology

Deng

et al. 2020

Nanomaterials

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“…Comparatively, the BE values obtained for Li 1s, Te 3d and Ga 2p core levels in LiGaTe 2 are in a good relation with the BE values obtained earlier in several other representative compounds. [49][50][51][52] The calculated electronic total and partial densities of states (DOS and PDOS) projected on the constituent elements in LiGaTe 2 are displayed in Fig. 12.…”

Section: Comparison Between Xps Spectra and Band Structurementioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10][11][12] Because of specic features of metal-tellurium chemical bonds, tellurides possess narrow-bandgap semiconductor or metallic properties. 1,2,[6][7][8]11,12 Due to their low-wavenumber phonon spectrum, semiconductor tellurides are transparent in the mid-IR range and they can be used as optical window materials. However, the number of known noncentrosymmetric tellurides is not big and, only for several crystals, the linear and nonlinear properties are obtained.…”

Section: Introductionmentioning

confidence: 99%

Negative thermal expansion and electronic structure variation of chalcopyrite type LiGaTe₂

et al. 2018

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“…Intensive studies have been conducted regarding the surface atomistic and band structure evolution upon exposing to various gases including air [11][12][13][14][15][16][17], however it still remains elusive whether and how the Bi 2 X 3 intrinsically evolves in ultrahigh vacuum (UHV). ARPES studies indicated that a long stay in UHV induces an energy band splitting [11].…”

Section: Pacs Numbersmentioning

confidence: 99%

Aggregation of BiTe monolayer on Bi2Te3 (111) induced by diffusion of intercalated atoms in the van der Waals gap

Wang¹,

Huang²,

Zhang³

et al. 2017

Phys. Rev. B

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We report a post-growth aging mechanism of Bi2Te3(111) films with scanning tunneling microscopy in combination with density functional theory calculation. It is found that a monolayered structure with a squared lattice symmetry gradually aggregates from surface steps. Theoretical calculations indicate that the van der Waals (vdW) gap not only acts as a natural reservoir for selfintercalated Bi and Te atoms, but also provides them easy diffusion pathways. Once hopping out of the gap, these defective atoms prefer to develop into a two dimensional BiTe superstructure on the Bi2Te3(111) surface driven by positive energy gain. Considering the common nature of weakly bonding between vdW layers, we expect such unusual diffusion and aggregation of the intercalated atoms may be of general importance for most kinds of vdW layered materials. PACS numbers:Studies on bismuth chalcogenide (Bi 2 X 3 ) have long been focused regarding the potential in thermoelectricity [1], and also been revived recently by the discovery of topological insulators (TIs) [2][3][4][5][6][7][8][9][10]. It has been confirmed that most Bi 2 X 3 compounds, such as Bi 2 Te 3 , Bi 2 Se 3 and Sb 2 Se 3 , are prototypical 3D TIs [5][6][7][8]. Hosting the topological surface states and gapped bulk band structure, Bi 2 X 3 becomes promising in the future applications such as quantum computation and spintronic etc [2][3][4].In spite of the robustness of the topological surface states against time-reversal invariant perturbation, temporal stability of the surface or interface still greatly affects the Bi 2 X 3 's performance and application. Intensive studies have been conducted regarding the surface atomistic and band structure evolution upon exposing to various gases including air [11][12][13][14][15][16][17], however it still remains elusive whether and how the Bi 2 X 3 intrinsically evolves in ultrahigh vacuum (UHV). ARPES studies indicated that a long stay in UHV induces an energy band splitting [11]. A low-energy ion scattering (LEIS) study confirmed a way of surface degradation of Bi 2 Se 3 , i.e., the cleaved surface in UHV undergoes a fast Se evaporation and is thus terminated by Bi bilayer [18]. It was also observed that annealing induces the surface segregation of Bi bilayer [19]. Therefore, a direct characterization of surface evolution upon long term exposure in UHV is important, which, however, hasn't been reported yet.In this Letter, we demonstrate a post-growth aggregation on Bi 2 Te 3 (111) surface induced by the selfintercalation and diffusion of Bi and Te atoms in the van der Waals (vdW) gap with scanning tunneling microscopy (STM) in combination with density functional theory (DFT) calculation. We observe that upon long term aging, a monolayered Mosaic pattern, presumably composed of Bi and Te, is gradually formed starting at the step edges of Bi 2 Te 3 (111) surface. DFT calculations confirm that Bi atoms prefer to be intercalated in the vdW gap between quintuple layers (QLs) than being adsorbed on the surface, and the difference between ...

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Crystal growth of Bi2Te3 and noble cleaved (0001) surface properties

Cited by 32 publications

References 80 publications

High-Quality Black Phosphorus Quantum Dots Fabricated via Microwave-Tailored Technology

High-Quality Black Phosphorus Quantum Dots Fabricated via Microwave-Tailored Technology

Negative thermal expansion and electronic structure variation of chalcopyrite type LiGaTe₂

Aggregation of BiTe monolayer on Bi2Te3 (111) induced by diffusion of intercalated atoms in the van der Waals gap

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Crystal growth of Bi2Te3 and noble cleaved (0001) surface properties

Cited by 32 publications

References 80 publications

High-Quality Black Phosphorus Quantum Dots Fabricated via Microwave-Tailored Technology

High-Quality Black Phosphorus Quantum Dots Fabricated via Microwave-Tailored Technology

Negative thermal expansion and electronic structure variation of chalcopyrite type LiGaTe2

Aggregation of BiTe monolayer on Bi2Te3 (111) induced by diffusion of intercalated atoms in the van der Waals gap

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Negative thermal expansion and electronic structure variation of chalcopyrite type LiGaTe₂