Crystal growth and elastic properties of In2Se3

Nondestructive Picosecond Ultrasonic Probing of Intralayer and van der Waals Interlayer Bonding in α‐ and β‐In2Se3

“…It is worth mentioning that the sound velocity was also measured by the traditional (MHz) ultrasonic technique in bulk α-In 2 Se 3 . [43] In this previous work, the authors obtained G Σ = 40.4 GPa, which compares satisfactorily with our theoretical and experimental results. However, we also note that this value is closer to the calculated for α-In 2 Se 3 (3R), which was not available in our PU experiments.…”

“…The efficiency of thermoelectric devices is directly related to the ratio of in-plane and out-of-plane thermal conductivities, which is dependent on the difference of the intralayer and vdW atomic bonding. [44] The significantly different elastic properties of the polytypes suggest that controlled transitions between polytype phases, caused for example by heating and The data is taken from the paper by Raranskii et al [43] Adv. Funct cooling, [26,27] can be used to tune the acousto-electrical properties of materials like In 2 Se 3 .…”

Solution-phase synthesis and thermal conductivity of nanostructured CdSe, In2Se3, and composites thereof

“…76 Although we could not nd literature for the speed of sound anisotropy in g-In 2 Se 3 , we note that the speed of sound anisotropy in a-In 2 Se 3 is signicant, $70% for the longitudinal phonon mode. 60 We also note that the acoustic impedance mismatch in our grain boundaries is dominated by the speed of sound since the densities of CdSe and In 2 Se 3 only differ by $6%. Due to these grain orientation effects, some fraction of the In 2 Se 3 -In 2 Se 3 grain boundaries likely have larger thermal interface resistances than CdSe-In 2 Se 3 grain boundaries and vice versa.…”

“…It is worth noting that another common form of indium selenide, a-In 2 Se 3 , is also known to be highly anisotropic. 58,60 The strong crystallographic orientation preference of the In 2 Se 3 is eliminated upon introducing CdSe nanocrystals into the composite, which indicates that the CdSe nanocrystals have a highly disruptive effect on the In 2 Se 3 formation. This is indicated by the disappearance of the (0 0 6) In 2 Se 3 reection and appearance of new In 2 Se 3 reections.…”

Piezoelectric biaxial strain effects on the optical and photoluminescence spectra of 2D III–VI compound α -In2Se3 nanosheets

“…where d is the piezoelectric constant, Y is the Young's modulus, e is the strain, and e is the elementary electric charge. According to the references, d 33 ¼ 5.6 pC/N, 13 35 Assuming that the volume of the a-In 2 Se 3 unit cell is a constant, when a strain of À0.055% is imposed in-plane under 500 V, a strain of 0.11% along the c-axis is induced simultaneously. As a result, the polarization induced charge concentration is 2.8 Â 10 13 cm À2 and 1.8 Â 10 13 cm À2 along in plane and out of plane directions, respectively.…”