Crystal Growth and Characterization of the Kondo Semimetal CeNiSn

Nakamoto, G.; Takabatake, Toshiro; Fujii, H.; Minami, Asao; Maezawa, K.; Oguro, I.; Menovsky, A.A.

doi:10.1143/jpsj.64.4834

Cited by 103 publications

(76 citation statements)

References 13 publications

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“…[24] This may be because of the smaller magnetic moment for Sm (gJ = 2.14 for Ce whereas gJ = 0.71 for Sm). Magnetoresistance of CeNiSn is measured to be positive [8] in contrast to the present calculation. The structure of the gap and the mechanism of the low temperature transport in this compound is still not clear.…”

Section: Discussioncontrasting

confidence: 99%

Self-Consistent Perturbational Study of Insulator-to-Metal Transition in Kondo Insulators due to Strong Magnetic Field

Saso¹

1997

J. Phys. Soc. Jpn.

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In order to study the effects of strong magnetic field on Kondo insulators, we calculate magnetization curves and single-particle excitation spectra of the periodic Anderson model at half-filling under finite magnetic field by using the self-consistent second-order perturbation theory combined with the local approximation which becomes exact in the limit of infinite spatial dimensions. Without magnetic field, the system behaves as an insulator with an energy gap, describing the Kondo insulators. By applying magnetic field to f-electrons, we found that the energy gap closes and the first order transition from insulator to metal takes place at a critical field H c . The magnetization curve shows a jump at H c . These are consistent with our previous study in terms of the exact diagonalization. Relationship to the experiments on YbB 12 and some other Kondo insulators is discussed.

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Section: Discussioncontrasting

confidence: 99%

Self-Consistent Perturbational Study of Insulator-to-Metal Transition in Kondo Insulators due to Strong Magnetic Field

Saso¹

1997

J. Phys. Soc. Jpn.

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“…This phase has also been detected in several single crystals of CeNiSn by other authors. 17 The electronic structures of ordered Zr-Ni-Sn and…”

Section: Methodsmentioning

confidence: 99%

Suppression of the gap energy in Zr-Ni-Sn and Ti-Ni-Sn by partial substitution of Zr and Ti by Ce

et al. 1998

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We report on magnetic measurements and electronic structure investigations of the alloyed compounds Zr-Ni-Sn and Ti-Ni-Sn. Both belong to the group of semi-Heusler alloys, and are classified as narrow-gap semiconductors with indirect gaps near 500 meV. Tetravalent ions ͑Zr,Ti͒ are partly replaced by Ce, with a Ce concentration less than 20%. Susceptibility measurements indicate the magnetic ground state of Ce in both Zr-Ni-Sn and Ti-Ni-Sn, and the effective moment is near the trivalent value at Tϭ300 K. The Ce 4 f 1 configuration is well accepted by Ce 3d x-ray photoemission spectra. We compare the x-ray photoemission spectroscopy valence-band spectra for investigated Ce alloys. A very good agreement between the experiments and calculations is obtained. We classify Zr-Ni-Sn and Ti-Ni-Sn as alloys with a strong hybridization influence on the gap formation. The destructive alloying affecting the gap stability seems to have the same origin as in the case of Ce Kondo insulators. ͓S0163-1829͑98͒07115-X͔

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“…Both disorder and impurities can have such an effect. Indeed, it has been shown that impurities have a very strong influence on the semiconducting properties of CeNiSn [14]. It is worth noting that good-quality samples of CeNiSn are much more difficult to obtain than the samples of CeRhSb, which also implies that the experimental data for the doped CeNiSn are less reliable than the data for the doped CeRhSb.…”

Section: Discussionmentioning

confidence: 99%

Quantum critical transition from Kondo insulator to metallic state studied by band‐structure calculations for doped compounds: CeRhSb and CeNiSn

Goraus

Ślebarski

2013

Physica Status Solidi (b)

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We present the ab initio calculations of the on‐site hybridization between Ce 4f and Ce 5d electrons as well as the Mulliken Ce 5d occupation for the doped Kondo insulators CeRhSb and CeNiSn. In our investigations we have examined the following series: CeRhSb1 − xSnx, CeRh1 − xPdxSb, CeRhSb1 − xTex, Ce1 − xLaxRhSb and CeNi1 − xCuxSn, CeNiSn1 − xSbxSb, Ce1 − xLaxNiSn. The transition from the Kondo insulator to the metallic state induced by doping at some critical concentration xc was recently reported for various dopants based on the resistivity, susceptibility and spectroscopic data. Our calculations show that both the Mulliken occupation of Ce 5d states and the onsite hybridization between Ce 4f and Ce 5d states exhibit critical behavior at nearly the same dopant concentrations as observed in experiment. We also note that for the CeRhSb‐based alloys the disorder is not necessary to explain their critical behavior, in contrast to the CeNiSn‐based series.

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Crystal Growth and Characterization of the Kondo Semimetal CeNiSn

Cited by 103 publications

References 13 publications

Self-Consistent Perturbational Study of Insulator-to-Metal Transition in Kondo Insulators due to Strong Magnetic Field

Self-Consistent Perturbational Study of Insulator-to-Metal Transition in Kondo Insulators due to Strong Magnetic Field

Suppression of the gap energy in Zr-Ni-Sn and Ti-Ni-Sn by partial substitution of Zr and Ti by Ce

Quantum critical transition from Kondo insulator to metallic state studied by band‐structure calculations for doped compounds: CeRhSb and CeNiSn

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