Abstract:We report on magnetic measurements and electronic structure investigations of the alloyed compounds Zr-Ni-Sn and Ti-Ni-Sn. Both belong to the group of semi-Heusler alloys, and are classified as narrow-gap semiconductors with indirect gaps near 500 meV. Tetravalent ions ͑Zr,Ti͒ are partly replaced by Ce, with a Ce concentration less than 20%. Susceptibility measurements indicate the magnetic ground state of Ce in both Zr-Ni-Sn and Ti-Ni-Sn, and the effective moment is near the trivalent value at Tϭ300 K. The Ce… Show more
“…In Ref. [12] we have argued that the lowering of the valence of Zr or Ti in the Ce-dopped samples closes the gap at CF. We believe that the reasons leading to the gap in the semi-Heusler alloys of the ZrNiSn-type and in the Ce-Kondo insulators seem to be similar.…”
Section: Comparison Of the Electronic Structure Of Some Ternary D Andmentioning
confidence: 99%
“…We argued in Refs. [11,12] that the occupation number of . Ce f orbital, when it is smaller than 1, correlates with formation of the gap.…”
Section: Effect Of Ałłoying On the Electronic Structurementioning
confidence: 99%
“…Recently, we have discussed the mixed valence of Ce in CeNiSn and CeRhSb [11][12][13], which seems to be very important for the formation of the gap. In this class of compounds in almost every case there is an isostructural semiconductor in which the 4f-element is replaced by a nοn-4 f tetravalent element.…”
We report on magnetic measurements and electronic structure investigations of CeNiSn and CeRhSb. Both belong to the group of Kondo insulators. The magnetic susceptibility shows the nonmagnetic ground state for these compounds and their alloys. The 3d X-ray photoemission spectroscopy spectra show evidence for the mixed valence state of Ce in CeRhSb alloys, as also seen for CeNiSn, whereas the spectra for the La substituted (Ce,La)NiSn compounds show only evidence for a pure Ce 3+ ground state. We suggest the presence of Kondo-hole states in (Ce,La)RhSb. The location of the pseudogap in CeRhSb varies with the number of free electron, the valence of Ce, and the f-d hybridization. We discuss the similar crystallographic properties and the closed electronic structures of ZrNiSn-type semi-Heusler alloys and CeNiSn-type Kondo insulators.
“…In Ref. [12] we have argued that the lowering of the valence of Zr or Ti in the Ce-dopped samples closes the gap at CF. We believe that the reasons leading to the gap in the semi-Heusler alloys of the ZrNiSn-type and in the Ce-Kondo insulators seem to be similar.…”
Section: Comparison Of the Electronic Structure Of Some Ternary D Andmentioning
confidence: 99%
“…We argued in Refs. [11,12] that the occupation number of . Ce f orbital, when it is smaller than 1, correlates with formation of the gap.…”
Section: Effect Of Ałłoying On the Electronic Structurementioning
confidence: 99%
“…Recently, we have discussed the mixed valence of Ce in CeNiSn and CeRhSb [11][12][13], which seems to be very important for the formation of the gap. In this class of compounds in almost every case there is an isostructural semiconductor in which the 4f-element is replaced by a nοn-4 f tetravalent element.…”
We report on magnetic measurements and electronic structure investigations of CeNiSn and CeRhSb. Both belong to the group of Kondo insulators. The magnetic susceptibility shows the nonmagnetic ground state for these compounds and their alloys. The 3d X-ray photoemission spectroscopy spectra show evidence for the mixed valence state of Ce in CeRhSb alloys, as also seen for CeNiSn, whereas the spectra for the La substituted (Ce,La)NiSn compounds show only evidence for a pure Ce 3+ ground state. We suggest the presence of Kondo-hole states in (Ce,La)RhSb. The location of the pseudogap in CeRhSb varies with the number of free electron, the valence of Ce, and the f-d hybridization. We discuss the similar crystallographic properties and the closed electronic structures of ZrNiSn-type semi-Heusler alloys and CeNiSn-type Kondo insulators.
“…The electronic structure of the half-metallic Heusler alloys was studied last decade by experimental and theoretical approaches [28][29][30][31][32][33] but basically the linearized muffin-tin orbital method was used with limitation for shape approximation for crystal potential excepting paper Ref. 30), where the fullpotential screened Korringa-Kohn-Rostoker method was applied.…”
Section: Electronic Structure Of Half-heusler Alloysmentioning
confidence: 99%
“…[21][22][23][24][25][26][27] The similar tendency is observed for half-metallic Heusler alloys. [28][29][30][31][32][33] The calculations were mainly performed using the local spin density approximation (LSDA), which are known to be underestimated lattice constants and provide smaller magnetic moments. In present paper we report the results of ab-initio calculations of the electronic structure and structural and magnetic properties in different series of Heusler alloys based on Fe-, Co-and Mn, focusing on the effects of their composition and s-p Z atom and extend our study on the halfHeusler alloys also using the full-potential approach within the generalized gradient approximation (GGA) for exchange correlation potential.…”
The electronic structure of the full-and half-Heusler alloys have been studied by ab-initio calculations using full potential augmented plane-wave-method (FLAPW). It was shown that obtained equilibrium lattice parameters and magnetic moments agree well with available experimental data. The influence of vacancies on the electronic structure and magnetic properties of Ni 2Àx MnGa and Co 2Àx ZrSn is analyzed.
To investigate the electronic structure of TiNiSn-based thermoelectric materials, we systematically synthesized samples, Ti 1Àx Ni 1+x Sn (À0.05 £ x £ 0.05), and performed soft-x-ray photoelectron spectroscopy (XPS) measurements. A peak with a binding energy of about 0.3 eV, not expected from the perfect crystal, was observed in the XPS spectrum, and its intensity became weaker with decreasing x. This peak indicates that defects exist in the x = 0 sample and are reduced with decreasing x. First-principles calculations using several defect models led to the conclusion that interstitial Ni defects in the halfHeusler structure consistently explain the experimental observations, including the XPS spectra and changes in lattice constants.
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