Crystal-Face Dependences of Surface Band Edges and Hole Reactivity, Revealed by Preparation of Essentially Atomically Smooth and Stable (110) and (100) n-TiO₂ (Rutile) Surfaces

Abstract

Essentially atomically smooth (100) and (110) n-TiO(2) (rutile) surfaces were prepared by immersion of commercially available single-crystal wafers in 20% HF, followed by annealing at 600 degrees C in air. The obtained surfaces were stable in aqueous solutions of pH 1-13, showing no change in the surface morphology on an atomic level, contrary to atomically flat surfaces prepared by ion sputtering and annealing under UHV. The success in preparation of the atomically smooth and stable n-TiO(2) surfaces enabled us to reveal clear crystal-face dependences of the surface band edges and hole reactivity in aqueous solutions.

Electron transfer dynamics of single quantum dots on the (110) surface of a rutile TiO2 single crystal

“…The AFM topology image of the TiO 2 (110) surface ( Figure S2(a)) shows clear step edges with a step height of ~0.3-0.4 nm ( Figure S2(b)), consistent with previous reports [33,34]. To…”

Preparation and structure of a single Au atom on the TiO2(110) surface: control of the Au–metal oxide surface interaction

“…20 , 21 The Japan). Au coverage was estimated from X-ray photoelectron spectroscopy (XPS) peak area ratios of Au 4f 7/2 to Ti 2p 3/2 .…”

Preparation of ordered 1x1 surface of rutile TiO₂ (001) for surface x-ray diffraction study

“…However, according to our experience in other materials such as Si, the LEED pattern shown in Figure 2 Etching is another possible way to obtain an ordered surface. In the literature both concentrated H 2 SO 4 [18][19][20] and 20 % HF solution [21,22] were used to etch the surface of TiO 2 . Since excessive etching would create a rough surface, 20 % HF solution was selected.…”