Crystal and Electrical Characterizations of Oriented Yttria-Stabilized Zirconia Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistor

Hirai, Tadahiko; Teramoto, Kazuhiro; Nagashima, Kazuhito; Koike, Hiroshi; Matsuno, Shinsuke; Tanimoto, Satoshi; Tarui, Yasuo

doi:10.1143/jjap.35.4016

Cited by 35 publications

(17 citation statements)

References 9 publications

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“…In this process, protons are found to migrate along the YSZ surface or grain boundaries, respectively. On the other hand, as early as 1996, YSZ has already been successfully used as the buffer layer in FET, showing good insulating behavior [147]. In 2014, Tsuchiya [62].…”

Section: Yttria-stabilized Zirconiamentioning

confidence: 99%

Electric double-layer transistors: a review of recent progress

2015

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With the miniaturization of electronic devices, it is essential to achieve higher carrier density and lower operation voltage in field-effect transistors (FETs). However, this is a great challenge in conventional FETs owing to the low capacitance and electric breakdown of gate dielectrics. Recently, electric double-layer technology with ultra-high charge-carrier accumulation at the semiconductor channel/electrolyte interface has been creatively introduced into transistors to overcome this problem. Some interesting electrical transport characteristics such as superconductivity, metal-insulator transition, and tunable thermoelectric behavior have been modulated both theoretically and experimentally in electric double-layer transistors (EDLTs) with various semiconductor channel layers and electrolyte materials. The present article is a review of the recent progress in the EDLTs and the impacts of EDLT technology on modulating the charge transportation of various electronics.

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Section: Yttria-stabilized Zirconiamentioning

confidence: 99%

Electric double-layer transistors: a review of recent progress

2015

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“…Stacking buffer layers with perovskite-type lattice surfaces is a prospective approach to achieve the crystal orientation of PZT films on versatile substrates. Some researchers have reported successful results (e.g., using CeO 2 /YSZ or SrTiO 3 buffer layers, 4,7,12 or one-axis-oriented (100)LaNiO 3 template 13,14 ) in which the preferential c-/a-domain formation was realized together with the variation of their ferroelectric/piezoelectric properties. Single-crystal nanosheets of calcium niobate (Ca 2 Nb 3 O 10 ) that possess a pseudo-perovskite-type crystal structure 15,16 are currently being utilized for the buffer layers to control the crystal orientation of perovskite-or layer-perovskite-type dielectric films (SrTiO 3 21 etc.)…”

Section: Introductionmentioning

confidence: 99%

Polar-axis-oriented crystal growth of tetragonal PZT films on stainless steel substrate using pseudo-perovskite nanosheet buffer layer

et al. 2015

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Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals Journal of Applied Physics 82, 1804 (1997) Lead zirconate titanate (PZT) film with polar axis orientation was grown on a SUS 316L stainless steel substrate with the help of a Ca 2 Nb 3 O 10 nanosheet (ns-CN) layer that had a pseudo-perovskite-type crystal structure. The ns-CN buffer layer was supported on a platinized SUS 316L (Pt/SUS) substrate, followed by chemical solution deposition (CSD) of the PZT films with tetragonal symmetry (Zr/Ti =40/60). The PZT films consisting of c-domain, with [001]-axis orientation of the perovskite unit cell, were deposited on the ns-CN/Pt/SUS substrate owing to (i) epitaxial lattice matching between the unit cell of PZT and substrate surface and (ii) in-plane thermal stress applied to the PZT film during cooling-down step of CSD procedure. The c-domain-oriented PZT film on ns-CN/Pt/SUS substrate exhibited enhanced remanent polarization of approximately 52 µC/cm 2 and lowered dielectric permittivity of approximately 230, which are superior to those of conventional PZT films with random crystal orientation and comparable to those of epitaxial PZT films grown on (100)SrRuO 3

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“…Several metal/metal oxide structures are being investigated to find a suitable electrode/diffusion barrier combination with low resistivity, good adhesion, excellent diffusion barrier properties, good thermal stability, and high chemical corrosion resistance. 1,[3][4][5][6] However, these electrode or electrode/barrier materials are reported to be stable up to 700°C which is lower than the commonly reported processing temperature of SBT ͑750-800°C͒ and, for that reason, fewer studies have been focused on the effects of electrode/diffusion barrier materials on the properties of SBT thin films for the realization of highdensity memories. 7 In this letter, we report on the properties of a low temperature processed 0.7SrBi 2 Ta 2 O 9 -0.3Bi 3 TaTiO 9 ͑0.7SBT-0.3BTT͒ solid-solution thin films fabricated directly on n ϩ -polycrystalline (n ϩ -poly͒ Si substrates with Pt-Rh ͑10% Rh͒ and Pt-Rh-O x as the electrode and diffusion barrier layers, respectively.…”

Section: ͓S0003-6951͑99͒01240-1͔mentioning

confidence: 99%

Low temperature processed 0.7SrBi2Ta2O9–0.3Bi3TaTiO9 thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memories

Ryu

Joshi

Desu

1999

Applied Physics Letters

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Thin films of solid-solution material 0.7SrBi2Ta2O9–0.3Bi3TaTiO9 (0.7SBT–0.3BTT) were fabricated on n+-polycrystalline (n+-poly) Si substrates by a metalorganic solution deposition technique at a low processing temperature of 650 °C using a Pt–Rh/Pt–Rh–Ox electrode-barrier structure. The Pt–Rh/Pt–Rh–Ox structure was deposited using an in situ reactive radio frequency sputtering process. The electrodes had a smooth and fine-grained microstructure and were excellent diffusion barriers between the 0.7SBT–0.3BTT thin film and Si substrate. The ferroelectric (0.7SBT–0.3BTT) test capacitors using these electrode-barrier grown directly on Si showed good ferroelectric hysteresis properties, measured through n+-poly Si substrate, with 2Pr and Ec values of 11.5 μC/cm2 and 80 kV/cm, respectively, at an applied electric field of 200 kV/cm. The films exhibited good fatigue characteristics (<10% decay) under bipolar stressing up to 1011 switching cycles and the leakage current density was lower 10−7 A/cm2 at an applied electric field of 200 kV/cm. The good ferroelectric properties of 0.7SBT–0.3BTT solid-solution thin films at a low processing temperature of 650 °C and excellent electrode-diffusion barrier properties of a Pt–Rh/Pt–Rh–Ox structure are encouraging for the realization of high-density nonvolatile ferroelectric random access memories on silicon substrates.

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Crystal and Electrical Characterizations of Oriented Yttria-Stabilized Zirconia Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistor

Cited by 35 publications

References 9 publications

Electric double-layer transistors: a review of recent progress

Electric double-layer transistors: a review of recent progress

Polar-axis-oriented crystal growth of tetragonal PZT films on stainless steel substrate using pseudo-perovskite nanosheet buffer layer

Low temperature processed 0.7SrBi2Ta2O9–0.3Bi3TaTiO9 thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memories

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