Cryogenic Evaluation and Modeling of a 900 V Cascode GaN HEMT

Hossain, Maksudul; Wei, Yuqi; Rashid, Arman Ur; Sweeting, Rosten; Mantooth, H. Alan

doi:10.1109/ecce-asia49820.2021.9479307

Cited by 6 publications

(6 citation statements)

References 3 publications

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“…Moreover, the V Th is slightly increased like the Si-based devices. A reduction in switching energy losses is also observed due to the Q rr[54][57].…”

mentioning

confidence: 90%

Cryogenically-Cooled Power Electronics for Long-Distance Aircraft

et al. 2022

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New aerodynamic aircraft concepts enable the storage of volumetric liquid hydrogen (LH 2 ). Additionally, the low temperatures of LH 2 allow technologies such as the superconductivity of electrical components. An increased power density of the onboard wiring harness and the electrical machine can be expected. Nevertheless, the power electronic drive inverter has to deliver high power and high switching frequencies (f PWM s) under challenging conditions. Therefore, knowledge of the electric behaviour of different semiconductor materials under cryogenic temperatures is essential to answer the question: "Are modern power electronics a technology enabler or a system bottleneck?" This publication shows a comprehensive novelty study for cryogenic power electronics based on experimental-driven semiconductor investigations, mission profile-based considerations, requirement analyses of superconducting electrical machines, and studies of the cooling concepts. All aspects are discussed within one interdisciplinary publication. A cryogenic system cannot be considered without a feasible cooling concept. Different semiconductor structures based on various materials (silicon (Si), silicon carbide (SiC) and gallium nitride (GaN)) are evaluated for their suitability. The collected data and the literature review draw a technology feasibility studies supported by detailed cooling system analyses and superconducting electrical machine requirements. The power demand and high f PWM lead to a SiC non-cryogenic inverter approach. Due to the detailed cooling system assessment, a loss reduction is achieved by optimising the junction temperature (T J ) under various load cases (LCs) out of the mission profile.INDEX TERMS Long-distance aircraft, fuel cell, liquid hydrogen, cryogenic cooler design, high temperature superconductivity, cryogenic electrical power supply system, cryogenic power electronics, experimental semiconductor comparison, cryogenic inverter design ACRONYMS

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“…Moreover, the V Th is slightly increased like the Si-based devices. A reduction in switching energy losses is also observed due to the Q rr[54][57].…”

mentioning

confidence: 90%

Cryogenically-Cooled Power Electronics for Long-Distance Aircraft

et al. 2022

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“…Although a 900V cascade GaN HEMT is available now commercially, due to the inherent discrete-die nature of the topology, the interconnect and common source inductance is higher along with added onresistance, RDS(on) from the low voltage (LV) silicon MOSFET [3].…”

Section: Cascode Structure Issuesmentioning

confidence: 99%

“…At the time of this writing, commercial offerings of GaN device voltage can be outlined in the range of 600-900V. More recently, a 900V cascode GaN HEMT has become available [3]. Several techniques are described in the literature for achieving high IOP Publishing doi:10.1088/1757-899X/1241/1/012041 2 voltage without needing to use high breakdown voltage devices.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of a 1200V GaN HEMT at cryogenic temperatures

Hossain

Wei

Rashid

et al. 2022

IOP Conf. Ser.: Mater. Sci. Eng.

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The cryogenic operation of power converters integrated with the superconducting electric machines can leverage the lower parasitic, lower core material, and insulation requirement to reduce weight and increase power density in aerospace applications. To that end, Gallium Nitride High Electron Mobility Transistor (GaN HEMT) has recently proven to be the most viable option for the cryogenic converter operation. However, the topology selection and optimization are greatly influenced by the current/voltage rating of the power devices. Although series connected HEMTs can increase the blocking voltage, the dynamic voltage imbalance issue stemming from device parameter fluctuations, the larger number of required isolated gate driver makes the need for single high blocking voltage devices more compelling. This is even more pronounced in GaN due to its higher operating frequency which stems from the lower input capacitance. Although 900V cascode GaN HEMTs are now commercially available, single-chip high voltage HEMTs are attractive due to their zero reverse recovery charge, and lower package bonding parasitics. In this paper, a 1200V enhancement-mode GaN HEMT from GaNPower International has been characterized at cryogenic temperature. A 63% decrease has been demonstrated in the on-resistance, Rds(on) from room temperature to -150°C. The threshold voltage shows a 1.2x increase from room temperature to cryogenic temperature (-178°C). The transconductance (Gfs) shows a 1.34x increase for a temperature difference of 175°C. The results translate to a lower conduction loss and a faster switching speed and unfold further possibility of GaN in cryogenic converter applications.

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“…The commercial availability of GaN power switch enhancement mode (E-mode) is still limited to 650 V range [11]. In addition, a 900 V cascode GaN power switch has recently become available by Transphorm [16]. Most recently, GaNPower International introduced a 1200 V N-channel enhancement-mode (E-mode) device, which shows the potential of GaN power switch for higher voltage applications [17].…”

Section: Introductionmentioning

confidence: 99%

“…Numerical modeling involves complex simulation tools like SILVACO as well as TCAD and requires detailed information on internal structure, material properties, and device geometry [19,23,24]. Although the accuracy of numerical models is very good, the complexity and computation time are very high [16]. The physics-based models imply solving semiconductor physics equations to determine the electrical behavior of power switches [19,[25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

Impact of parasitic elements on the power dissipation of Si superjunction MOSFETs, SiC MOSFETs, and GaN HEMTs

Joshi,

Pande,

Jadli

et al. 2023

Eng. Res. Express

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In power conversion systems, where higher switching frequencies are required for miniaturization, the selection of power switches with lower power loss becomes essential for achieving better efficiency. At higher switching frequencies, the parasitic elements of the power switch largely dictate the efficiency of the power electronic system. Hence, it becomes critical to investigate the impact of parasitic losses on overall efficiency. The parasitic components of the power transistor vary with the semiconductor technology and thus effects the power converter system differently. This paper compares three power switch technologies: Silicon (Si) based Superjunction (SJ) power MOSFET, Silicon Carbide (SiC) based power MOSFET, and Gallium Nitride (GaN) based HEMT, for three different voltage ratings: 650 V, 900 V, and 1200 V. The effect of the parasitic components on the converter efficiency has been demonstrated using an inductive clamped loading circuit implemented in LTSPICE. The results demonstrate that at a frequency of 200 kHz, the total power loss for 650 V power switches was 44 W, 108 W, and 127 W for GaN, SiC, and SJ, respectively. At 500 kHz, the total power loss for 1200 V power switches was 622 W and 720 W for GaN and SiC, respectively. Overall, the GaN technology provides lower power losses than SiC and SJ due to lower parasitic capacitance and on-resistance, indicating the potential of GaN power devices for higher voltage applications. This comparison enables a power engineer to select an appropriate power switch that ensures the best possible efficiency for a specific application.

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Cryogenic Evaluation and Modeling of a 900 V Cascode GaN HEMT

Cited by 6 publications

References 3 publications

Cryogenically-Cooled Power Electronics for Long-Distance Aircraft

Cryogenically-Cooled Power Electronics for Long-Distance Aircraft

Electrical characterization of a 1200V GaN HEMT at cryogenic temperatures

Impact of parasitic elements on the power dissipation of Si superjunction MOSFETs, SiC MOSFETs, and GaN HEMTs

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