Crosstalk evaluation, suppression and modeling in 3D through-strata-via (TSV) network

Xu, Zheng; Beece, Adam; Zhang, Dingyou; Chen, Qianwen; Chen, Kuan‐Neng; Rose, Kenneth; Lu, Jian‐Qiang

doi:10.1109/3dic.2010.5751477

Cited by 33 publications

(9 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Pun et al [25] investigated the substrate noise pattern induced through planar inductors and a grounded guard ring was proposed as one of the remedies to mitigate the crosstalk. In fact, the usefulness of reducing the substrate coupling noise by inserting ground TSVs in between signal TSVs had been reported earlier [26]. Ground TSVs shield the electric field generated from the signal TSVs to reduce coupling among them.…”

Section: Effect Of Ground Tsvmentioning

confidence: 96%

“…Similarly, for configuration B, the power loss P B will be the addition of power loss in the ground TSVs (g 1 -g 6 ) to the inductor TSVs (T 1 -T 4 ). P A and P B are calculated according to [31] as in expressions (25) and (26) by considering identically layered TSV windings. Earlier, it was established that the mutual inductance change for those two configurations is less than 1%.…”

Section: B Effect Of Multiple Ground Tsvs On Inductance and Quality mentioning

confidence: 99%

See 1 more Smart Citation

Modeling and Crosstalk Evaluation of 3-D TSV-Based Inductor With Ground TSV Shielding

Mondal

Cho

Kim

2017

IEEE Trans. VLSI Syst.

View full text Add to dashboard Cite

In this paper, we present a novel through-siliconvia (TSV)-based 3-D inductor structure with ground TSV shielding for better noise performance. In addition, a circuit model is proposed for the inductor, which can reduce the simulation time over finite-element-based 3-D full-wave simulation. Rigorous 3-D full-wave simulation is performed up to 10 GHz to validate the circuit model. The ground TSV-based 3-D inductor is found to be resilient to TSV-TSV crosstalk noise compared with conventional 3-D inductors. The simulation results revealed that more than −33 dB of isolation can be achieved at 2 GHz between the 3-D inductor and the noise probe.Index Terms-3-D full wave simulation, 3-D inductor, crosstalk, through-silicon-via (TSV) shielding.

show abstract

Section: Effect Of Ground Tsvmentioning

confidence: 96%

Section: B Effect Of Multiple Ground Tsvs On Inductance and Quality mentioning

confidence: 99%

Modeling and Crosstalk Evaluation of 3-D TSV-Based Inductor With Ground TSV Shielding

Mondal

Cho

Kim

2017

IEEE Trans. VLSI Syst.

View full text Add to dashboard Cite

show abstract

“…Crosstalk changes TSV characteristic impedance and signal propagation velocity, resulting in adverse impacts on timings and signal integrity [12]. Due to the shielding effect of ground shell, coaxial TSV has intrinsically higher noise immunity than that of paired TSVs because its conservative EM fields rarely leak out and couple to neighbors.…”

Section: Coaxial Tsv Crosstalk Study and Wideband Spice Modelingmentioning

confidence: 99%

Three-Dimensional Coaxial Through-Silicon-Via (TSV) Design

Lü

2012

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

Being one of the most attractive 3-D integration solutions, through-silicon-vias (TSVs) electrically connect multiple strata of integrated circuits and/or devices in a vertical fashion. This paper examines the electrical performance of coaxial TSV, which is a new configuration that offers better signal integrity than other TSV structures. Various processing materials and physical geometries are considered for coaxial TSV designs. The full-wave extraction and empirical calculations show good agreement in TSV passive elements (RLGC). Latency, power, and crosstalk are evaluated and compared between coaxial TSVs and common signal-ground (S-G) paired TSVs. Furthermore, a wideband SPICE model is established to well fit the coaxial TSV fullwave solution, facilitating 3-D system design and evaluation.

show abstract

“…Through-silicon-via (TSV) has been well regarded as a key component connecting chips vertically with shortened electrical delay and providing extremely dense I/O connections. Owing to its short distance, if designed properly, TSV could provide superior performances in terms of signal attenuation, rail collapse, and crosstalk [2], as compared to traditional interchip channels. On one hand, the improved signal integrity can potentially provide thousands of multi-Gb/s I/O and support for tens of T b/s data bandwidth between local chips without power-hungry equalization schemes [3], [4].…”

Section: Introductionmentioning

confidence: 97%

Power-bandwidth trade-off on TSV array in 3D IC and TSV-RDL junction design challenges

Yao

Feng

et al. 2012

2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems

View full text Add to dashboard Cite

Through-silicon-via (TSV) enables vertical connectivity between stacked chips or interposer and is a key technology for three-dimensional (3D) ICs. In this paper, we study the signal integrity issues of TSV-based 3D IC with high-speed signaling based on 3D electromagnetic field solver and SPICE simulations. Unlike other existing works, our study focuses on an array of TSVs and includes power and bandwidth trade-off between different signaling and termination techniques, such as singleended, differential and reduced-swing signaling. From our study, to achieve the best power efficiency, unterminated single-ended reduced-swing signaling should be applied, while terminated single-ended signaling can provide the maximum bandwidth. Beyond TSV, critical design challenges for the junction structure between TSVs and RDL traces are also revealed and analyzed. Result shows that at 20GHz, the fanout-like junction structure could cause more than 10dB return loss (S11) degradation when changing TSV pitch from 50μm to 200μm and even contribute more insertion loss (S21) than the TSV itself.

show abstract

Crosstalk evaluation, suppression and modeling in 3D through-strata-via (TSV) network

Cited by 33 publications

References 10 publications

Modeling and Crosstalk Evaluation of 3-D TSV-Based Inductor With Ground TSV Shielding

Modeling and Crosstalk Evaluation of 3-D TSV-Based Inductor With Ground TSV Shielding

Three-Dimensional Coaxial Through-Silicon-Via (TSV) Design

Power-bandwidth trade-off on TSV array in 3D IC and TSV-RDL junction design challenges

Contact Info

Product

Resources

About