Crosstalk analysis of dielectric inserted side contact multilayer graphene nanoribbon interconnects for ternary logic system using unconditionally stable FDTD model

Deepthi, Gurijala; Tatineni, Madhavi

doi:10.1016/j.mejo.2023.105698

Cited by 3 publications

(3 citation statements)

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“…where L represents the interconnect length, M=[E f /ΔE], λ D is the mean free path affected by defect scattering, λ i is the mean free path affected by edge scattering in the i-th subband, and N ch,i is the number of conducting channels of the i-th subband [3].…”

Section: Equivalent Circuit Modelmentioning

confidence: 99%

“…The p.u.l. inductance L pul and mutual inductance M pul of MLGNR interconnect have been given in [3].…”

Section: Contact Resistance and Other Parametersmentioning

confidence: 99%

“…resistance than single-layer GNR (SLGNR). However, some scholars have found that when multiple layers of GNR are stacked, it becomes easier for electrons to hop between each layer, which reduces the mean free path [3]. Through intercalation doping, the mean free path and Fermi level of electrons in MLGNR can be effectively increased, thus achieving the purpose of reducing the p.u.l.…”

Section: Introductionmentioning

confidence: 99%

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Performance investigation of doped multi-layer graphene nanoribbon as interconnects in modern technology nodes

Wu,

Pan

2024

J. Phys.: Conf. Ser.

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In this paper, the performance of intercalation doped multilayer graphene nanoribbons (MLGNR) with modern technology nodes is meticulously investigated. An unconditionally stable FDTD method is used to analyze the transient output of the circuit. Several cases of MLGNR interconnects under different doping materials, stacking directions and contact modes have been discussed. With multiple experiments carried out, it is shown that the Li-doped MLGNR interconnect with vertical stacking orientation has the most outstanding performance, which has the least delay compared with the traditional Cu interconnect and other counterparts in 3-nm and 5-nm nodes. In summary, the Li-doped vertically stacked MLGNR is very promising for carbon nano interconnects in the next generation of integrated circuits.

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Section: Equivalent Circuit Modelmentioning

confidence: 99%

“…The p.u.l. inductance L pul and mutual inductance M pul of MLGNR interconnect have been given in [3].…”

Section: Contact Resistance and Other Parametersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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