Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells

Abstract

We report an ultrafast cross phase modulation (XPM) effect in intersubband transition (ISBT) of InGaAs/AlAs/AlAsSb coupled quantum wells, where the ISBT absorption of a transverse-magnetic mode pump signal induces phase modulation of a transverse-electric mode probe signal. Using waveguide-type ISBT devices, we have achieved XPM-based 10 Gbit/s wavelength conversion with a power penalty of 2.53 dB. Also, we propose XPM-based signal processing circuits for gate switching and modulation format conversion.

Photoreflectance study of InGaAs/AlAsSb coupled double quantum wells

“…We have demonstrated the demultiplexing operation for 1-Tb/s pulses [5] using a waveguide structure. We also discovered a novel phase modulation phenomenon, in which absorption immune transverse electric (TE) mode light is phase-modulated by the ISBT excitation by transverse magnetic (TM) mode light [4]. This cross-phase modulation (XPM) is quite interesting since TE mode light does not suffer from large attenuation due to ISBTs.…”

“…In the past few years, optoelectronic devices based on InGaAs/Al(Ga)AsSb quantum wells (QWs) have been the subject of extensive research for use in laser diodes [1,2] and ultrafast all-optical switches [3,4]. Utrafast all-optical switches based on the intersubband transition (ISBT) in InGaAs/AlAsSb QWs with an ultrafast absorption response of 685 fs [3] at 1.55 μm have been fabricated by our group.…”

Compensating power depletion due to stimulated Raman scattering in high-power delivery fiber via spectral inversion revisited in a view of experimental implementation

“…There are many methods to implement alloptical spectral inversion, such as cross-gain modulation [11], cross-phase modulation [12][13][14] and four-wave mixing (FWM) [15,16], among which FWM in fibers is regarded as a promising one due to its numerous advantages, e.g. high speed, low noise, easy to be integrated, broad bandwidth [17].…”

Parametrization of the Optical Constants of AlAsxSb1-x Alloys in the Range 0.74-6.0 eV

“…AlAsSb-based systems have been widely investigated for high-speed optoelectronic device applications such as ultrafast cross-phase modulators [1], quantum-cascade lasers [2], distributed Bragg reflectors [3], ultrafast all-optical switches using intersubband transitions [4], and photodetectors [5,6]. The optical properties such as complex refractive index ñ = n + ik, dielectric function ε = ñ 2 = ε 1 + iε 2 , and interband transitions including the band gap of AlAsSb are needed for further device optimization [7], such as designs for distributed feedback grating waveguides [4] and simulations to predict the performance of solar cells [8,9].…”