2002
DOI: 10.1016/s1359-6454(02)00254-9
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Critical thickness for cracking of Pb(Zr0.53Ti0.47)O3 thin films deposited on Pt/Ti/Si(100) substrates

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Cited by 59 publications
(37 citation statements)
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“…These stresses are smaller than those calculated for thermal mismatch of the PZT and substrate at room temperature. This stress relaxation has been noted in other works [39]. The variation of residual stress affects many aspects of generator performance including compliance, strain at failure and resonance frequency.…”
Section: Bulge Testing Resultssupporting
confidence: 71%
“…These stresses are smaller than those calculated for thermal mismatch of the PZT and substrate at room temperature. This stress relaxation has been noted in other works [39]. The variation of residual stress affects many aspects of generator performance including compliance, strain at failure and resonance frequency.…”
Section: Bulge Testing Resultssupporting
confidence: 71%
“…This is because cracking in thick films releases a greater proportion of stored elastic energy meaning that cracking is favoured in thicker constrained film systems. This phenomenon was also observed in the films produced using other deposition techniques such as spin coating [32,33].…”
Section: Ball-milling Of Pzt Powdersupporting
confidence: 57%
“…9. The highest d 33 33 and ε r obtained in this work are still lower than the bulk PZT material (Pz26). This is mainly due to the existence of residual pores and cracks, and different grain 8 sizes in the film as well as the presence of the rigid substrate constraining the film.…”
mentioning
confidence: 51%
“…This effective value is a result of the difference in thermal expansion between paraelectric PZT and substrate above the Curie temperature ͑ϳ300°C 6 ͒ and between ferroelectric PZT and substrate below this temperature. Since the thermal expansion coefficient for Si ϳ5 ppm and for paraelectric PZT ϳ6.1 ppm, 6 an effective value of ϳ11 ppm results for the ferroelectric PZT. Further insight can be gained via a x-ray diffraction measurement at elevated temperatures.…”
mentioning
confidence: 99%
“…Lead zirconate titanate ͑PZT͒ films are being used in electronic devices and microelectromechanical systems, where the reliability depends on the residual stresses in the film. 5,6 A surface stress of 117 MPa after cooling from 650°C to room temperature has been determined using x-ray diffraction for PZT films ͑1 m thick, suffix 1͒ on Si substrates ͑525 m thick, suffix 2͒. 5,6 A calculation of the stresses using the relationships presented above yields then 2,surface ϭ0.4 MPa, 2,interface ϭϪ0.9 MPa and 1,interface ϭ117 MPa.…”
mentioning
confidence: 99%