Critical microstructure for ion-implantation gettering effects in silicon

Geipel, H.J.; Tice, W. K.

doi:10.1063/1.89385

Cited by 32 publications

(13 citation statements)

References 6 publications

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“…Among these metals, Cu has been studied intensively since Dash used it to decorate dislocations in silicon crystals [1]. Precipitation of Cu in silicon proceeds by formation of Cu silicide either heterogeneously at lattice imperfections, such as dislocations [1][2][3][4][5][6], stacking faults [7,8], and grain boundaries [9], or homogeneously in the silicon lattice [10,11]. The crystal structure of the precipitates examined in the transmission electron microscope (TEM) was reported to be the 00 -Cu 3 Si phase, in which the volume per Si atom is larger than in the silicon diamond cubic lattice [12].…”

Section: Introductionmentioning

confidence: 99%

Filling the voids in silicon single crystals by precipitation of Cu₃Si

Wen

Spaepen

2007

Philosophical Magazine

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This article presents a method to decorate all open volume defects in a silicon single crystal by Cu 3 Si precipitation. Si single crystals are being used for the determination of Avogadro's number with sufficient accuracy (1 part in 10 8 ) to allow the establishment of a physical standard for the kilogram. The method described here can be used to certify that the open volume in such crystals is sufficiently small. The voids in this work were formed artificially by annealing Heimplanted silicon wafers. Annealing after application of a copper nitrate solution to the surface followed by slow cooling produced Cu 3 Si precipitates in the 0 phase in the voids. To fill all the voids completely it proved necessary to coat the surfaces, after application of the nitrate, with a pure Cu layer as well. Slow cooling keeps the supersaturation of Cu small but sufficient to precipitate Cu into the voids. Formation of dislocation loops and stacking faults, often seen during Cu silicide precipitation in silicon after fast cooling, can be minimized. Other transition metals, such as Au, Ni, and Fe, were found to be less suitable than Cu for filling voids.

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Section: Introductionmentioning

confidence: 99%

Filling the voids in silicon single crystals by precipitation of Cu₃Si

Wen

Spaepen

2007

Philosophical Magazine

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“…The reduced electric field causes the avalanche initiation probability to be decreased, which results in the lower quantum efficiencies at the edge and the cut-on effect. From these results it is believed that the gettering [15] is enhanced for the novel shaped detectors. Process-induced defects, stacking faults, intrinsic defects, dislocations and impurities present in the active area tend to diffuse out into the p-type epitaxial region during a high-temperature processing step.…”

Section: Resultsmentioning

confidence: 80%

Characterization of novel active area silicon avalanche photodiodes operating in the Geiger mode

Morrison¹,

Mathewson²,

Rarity³

et al. 2004

Journal of Modern Optics

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We present a method for characterizing avalanche photodiode (APD) photon-counting detector efficiency as a function of active area. Various shallow-junction silicon APDs having a novel active area were manufactured and tested. We show that cylindrical and checkquerboard-shaped active areas have dark counts two orders of magnitude lower than standard circular devices with an equivalent active area. A parallel implementation of small active areas creates gettering sites for defects to migrate to, which is believed to create relatively defect-free active areas as the perimeter-to-area ratio is increased. However, a compromise between a large perimeter-to-area ratio and a structure useful for practical applications must be considered to optimize the detector.

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“…The lifetime was further improved in the presence of perfect, rather than partial, dislocations, perhaps not unexpected inasmuch as its elastic strain energy is considerably higher resulting in more effective gettering (the gettering ability is proportional to the square of the Burger's vector b (perfect dislocation b = ^a(llO); Frank partial dislocation b = Ja (111) (32)). Although the data in Figure 12 were for circular devices with a I40|jm diameter, the major consequences should be expected to hold for smaller device configurations (33).…”

Section: Bulk Defect Getteringmentioning

confidence: 96%