Critical issues in scanning electron microscope metrology

Postek, Michael T.

doi:10.6028/jres.099.059

Cited by 56 publications

(34 citation statements)

References 104 publications

(175 reference statements)

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“…These measurements are consistent with the requirement that SEM calibration should be performed using pitch measurements rather than feature width (Postek 1994). The motion of the electron beam through the objective lens field between the scan coils and the specimen introduces a rotation of the scan field relative to the grid orientation.…”

Section: Methodssupporting

confidence: 70%

Reproducibility and accuracy of spatial measurements from digitally captured images in the environmental scanning electron microscope

1998

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Summary: Accurate spatial measurements in a scanning electron microscope (SEM) require calibration of the magnification as a function of working distance and microscope operating conditions. This work presents the results of the calibration of an environmental SEM for the accurate spatial measurement of dimensions and areas in experiments, both for the measurement of strain in steel specimens under applied loads and the measurement of dimensional changes in timber with changes in relative humidity.

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Section: Methodssupporting

confidence: 70%

Reproducibility and accuracy of spatial measurements from digitally captured images in the environmental scanning electron microscope

1998

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“…Low accelerating voltage operation is an excellent mode of scanning electron microscopy and is extensively used for measurements in semiconductor production (Postek 1994(Postek , 1997Postek and Joy 1987). The beam penetration is small, and if properly applied, the specimen charging is kept at acceptable levels.…”

Section: Introductionmentioning

confidence: 99%

New application of variable‐pressure/environmental microscopy to semiconductor inspection and metrology

Postek

Vladár

2004

Scanning

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Summary: Variable-pressure/environmental scanning electron microscopy has been used for successful investigation binary and phase-shifting chromium on quartz optical photomasks. This methodology was also applied to patterned 193 nm photoresist structures. The application of this methodology to semiconductor metrology is new because of the recent availability of variable-pressure scanning electron microscopy (SEM) instrumentation equipped with high-resolution, high-signal, thermally assisted field emission technology in conjunction with large chamber and sample transfer capabilities. The variable-pressure SEM methodology employs a gaseous environment around the sample to help diminish the charge build-up that occurs under irradiation with the electron beam. Although very desirable for the charge reduction in many biological, pharmaceutical, and food applications, this methodology has not been employed for semiconductor photomask or wafer metrology until now. This is a new application of this technology to this area, and it shows great promise in inspection, imaging, and metrology in a charge-free operational mode. For accurate metrology, variable-pressure SEM methodology also affords a path that minimizes, if not eliminates, the need for charge modeling. This paper presents some of the early results in the variable-pressure SEM metrology of photomask and photoresist structures.

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“…A number of studies have been done on the edge enhancement characteristics of the secondary electron image because it can mask where the true edge of the specimen is located. [8,9,10] Thus, edge blooming can potentially lead to errors in many interpretations and any measurements made from the SEM image. Many adjustments in operating conditions (landing energy, signal choice, tilt, etc.)…”

Section: Discussionmentioning

confidence: 99%

Nanomanufacturing concerns about measurements made in the SEM I: imaging and its measurement

Postek

Vladár

2013

SPIE Proceedings

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The high resolution of the SEM is especially useful for qualitative and quantitative applications for both nanotechnology and nanomanufacturing. But, should users be concerned about the imaging and measurements made with this instrument? Perhaps one should or, at a minimum, understand some of the uncertainties associated with those measurements. It is likely that one of the first questions asked when the first scanning electron micrograph was ever taken was: "...how big is that?" The quality of that answer has improved a great deal over the past few years, especially since SEMs are being used as a primary tool on semiconductor processing lines to monitor the manufacturing processes. These needs prompted a rapid evolution of the instrument and its capabilities. Over the past 20 years or so, instrument manufacturers, through this substantial semiconductor industry investment of research and development (R&D) money, have vastly improved the performance of these instruments. All users have benefitted from this investment, especially where metrology with an SEM is concerned. But, how good are these data? This presentation will discuss a sub-set of the most important aspects and larger issues associated with imaging and metrology with the SEM. Every user should know, and understand these issues before any critical quantitative work is attempted.

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Critical issues in scanning electron microscope metrology

Cited by 56 publications

References 104 publications

Reproducibility and accuracy of spatial measurements from digitally captured images in the environmental scanning electron microscope

Reproducibility and accuracy of spatial measurements from digitally captured images in the environmental scanning electron microscope

New application of variable‐pressure/environmental microscopy to semiconductor inspection and metrology

Nanomanufacturing concerns about measurements made in the SEM I: imaging and its measurement

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