Critical IGBT Design Regarding EMI and Switching Losses

Tsukuda, Mamoru; Omura, Ichiro; Sakiyama, Yoko; Yamaguchi, Masakazu; Matsushita, K.; Ogura, T.

doi:10.1109/ispsd.2008.4538929

Cited by 25 publications

(3 citation statements)

References 3 publications

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“…The location of this transition point suggests that the variation in V CE may be dominated by the dynamic avalanche phenomenon. 22) With the dynamic avalanche, the self-clamping of V CE occurs and E off increases steeply. In this study, we regarded that E max adjacent to the bottom of the trench reaches the critical level at this point.…”

Section: Micro Dynamic Avalanche Phenomenonmentioning

confidence: 99%

“…Many studies on the dynamic avalanche phenomenon in power devices have been carried out. IGBT modeling, which considers the dynamic avalanche [16][17][18][19] and investigates selfclamping in V CE , [20][21][22][23][24][25][26][27] has been intensively performed. The dynamic avalanche phenomenon during reverse recovery in power diodes has also been studied.…”

Section: Micro Dynamic Avalanche Phenomenonmentioning

confidence: 99%

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Micro dynamic avalanche phenomenon during turn-off in Silicon insulated gate bipolar transistors

Machida¹,

Ito²,

Yamashita³

2014

Jpn. J. Appl. Phys.

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In this study, the dependence of the turn-off surge on gate resistance (R G) and temperature in Silicon insulated gate bipolar transistors was investigated. From the measured and simulated results, it became clear that the surge decrease that occurs with small R G derives from a dynamic avalanche phenomenon adjacent to the bottom of the trench. This phenomenon enables us to explain the dependence of the turn-off surge on not only the temperature but also on other conditions. It was confirmed that the amount of surge decrease with small R G is mainly determined by the collector current when the gate to emitter voltage reaches the threshold voltage. In addition, it was found that this surge decrease is affected even by a smaller avalanche generation rate compared with that in a critical electric field. This is due to a so-called “micro” dynamic avalanche phenomenon. This micro dynamic avalanche phenomenon plays a crucial role in turn-off surge, especially with small R G.

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Section: Micro Dynamic Avalanche Phenomenonmentioning

confidence: 99%

Section: Micro Dynamic Avalanche Phenomenonmentioning

confidence: 99%

Micro dynamic avalanche phenomenon during turn-off in Silicon insulated gate bipolar transistors

Machida¹,

Ito²,

Yamashita³

2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…In order to predict the trade-off curve between saturation collector voltage and turn-off loss, high current turn-off characteristics are required in addition to the analytical model for the on-state. The dynamic avalanche phenomena can occur during high current turn-off transient so the compact model for the advanced IGBT switching needs to include the dynamic avalanche phenomena in the formulation since the phenomena affects the turn-off losses and dynamic collector voltage waveform [18].…”

Section: Introductionmentioning

confidence: 99%