Critical current density in GdBaCuO superconducting thin films prepared by d.c. magnetron sputtering using a single planar target

Epitaxial yttria-stabilized zirconia (YSZ) buffer layers were grown successfully on sapphire (112̄0) substrates by using rf magnetron sputtering method. The films were cubic in structure with their (100) orientation normal to the substrate surface. YBa2Cu3O7 thin films were deposited on the YSZ/sapphire substrates by the in situ dc magnetron sputtering method. X-ray diffraction analysis showed they were highly c-axis oriented with the zero resistance temperature TCO=92 K and critical current density Jc=1.6×106 A/cm2 at 77 K.

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Critical current density in GdBaCuO superconducting thin films prepared by d.c. magnetron sputtering using a single planar target

Cited by 7 publications

References 3 publications

Synthesis and analysis of high Tc thin films

Synthesis and analysis of high Tc thin films

Properties of upper critical field and pinning potential in epitaxial GdBa2Cu3O7−δ thin film

YBa2Cu3O7 thin films grown on sapphire with epitaxial yttria-stabilized zirconia buffer layers

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