Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER

Mérelle, T.; Chabane, H.; Palau, J.M.; Castellani-Coulie, K.; Wrobel, Frédéric; Saigné, Frédéric; Sagnes, B.; Boch, J.; Vaillé, J.-R.; Gasiot, Gilles; Roché, Philippe; Palau, M.-C.; Carrière, T.

doi:10.1109/tns.2005.852319

Cited by 66 publications

(33 citation statements)

References 25 publications

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“…There are two reasons for this. The first one is that ''the cellflipping conditions are not dependent on the pulse waveforms as long as the pulse is a short pulse and, conversely, that long pulses have shape-dependent responses'' [20]. The other one is that the derived drain current based on a one-dimensional approximation ignores some items during the deriving in [15].…”

Section: The Physical Basis For Predicting the Cross Section Of 6t Somentioning

confidence: 99%

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Proton induced single event upset cross section prediction for 0.15 μm six-transistor (6T) silicon-on-insulator static random access memories

Li¹,

Zhou²,

Liu³

2012

Journal of Nuclear Science and Technology

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In this paper, an efficient physics-based method to estimate the saturated proton upset cross section for six-transistor (6T) silicon-on-insulator (SOI) static random access memory (SRAM) cells using layout and technology parameters is proposed. This method calculates the effects of radiation based on device physics. The simple method handles the problem with ease by SPICE simulations, which can be divided into two stages. At first, it uses a standard SPICE program to predict the cross section for recoiling heavy ions with linear energy transfer (LET) of 14 MeV-cm 2 /mg. Then, the predicted cross section for recoiling heavy ions with LET of 14 MeV-cm 2 /mg is used to estimate the saturated proton upset cross section for 6T SOI SRAM cells with a simple model. The calculated proton induced upset cross section based on this method is in good agreement with the test results of 6T SOI SRAM cells processed using 0.15 mm technology.

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Section: The Physical Basis For Predicting the Cross Section Of 6t Somentioning

confidence: 99%

“…From Equation (20), Equation (19) Combining Equations (16), (17), (21), and (22) with Equation (15), we get…”

Section: Proton Induced Seu Cross Section Predictionmentioning

confidence: 99%

Proton induced single event upset cross section prediction for 0.15 μm six-transistor (6T) silicon-on-insulator static random access memories

Li¹,

Zhou²,

Liu³

2012

Journal of Nuclear Science and Technology

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“…[9][10][11] The starting point is that electron-hole pairs produced during ionization are able to diffuse in the structure. As the electrical field is often low enough, electrons and holes diffuse conjointly.…”

Section: Soft Error Triggering Criterionmentioning

confidence: 99%

“…As the electrical field is often low enough, electrons and holes diffuse conjointly. [9][10][11] This is known as the ambipolar diffusion. Diffusion laws equations are well known and allow determining the carriers' densities in the vicinity of the sensitive electrodes.…”

Section: Soft Error Triggering Criterionmentioning

confidence: 99%

Monte Carlo Simulation of Neutrons, Protons, Ions and Alpha Particles Involved in Soft Errors in Advanced Memories

Wrobel

Saigné

2011

Progress in Nuclear Science and Technology

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Due to cosmic rays, electronic devices such as SRAM may undergo some dysfunctions such as single event upsets also called Soft errors. A crucial issue for aerospace applications is to be able to predict the Soft Error rate of a given device in a given environment. In this work, we present a predictive tool which deals with protons and heavy ions for space applications and with neutrons for atmospheric applications. Moreover, it deals with alpha particles which can be emitted naturally within the device, during nuclear decay of polluting uranium, thorium and their daughter nuclei. Natural alpha emitters from materials, such as hafnium, are also considered. Thus, the novelty of the code is its ability to address the issues of space, avionic and ground level applications. The Monte Carlo approach allows calculating simply the single event upset and multiple bit upset cross sections as well as the associated Soft Error rates. To state whether an error occurs or not, the code is able to consider well known criterions such as the critical energy deposited in a sensitive volume or the ambipolar diffusion model.

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“…Many works to model the SEU in Spice are presented in the literature. These works are based on the introduction of a current source between drain and source to model the radiation induced current in the transistor [5] , [18][19]. The compact model developed in this work is based on the concept of connecting a current source I SEU controlled by voltages, between the body contact and source terminals of the BSIMSOI model.…”

Section: Compact Model Simulationsmentioning

confidence: 99%

Compact modeling of the high temperature effect on the single event transient current generated by heavy ions in SOI 6T-SRAM

Boufouss

Pulido

Flandre

2010

Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT)

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A temperature dependence analysis of the single event transient current induced by heavy ions irradiation is performed in the range of 300K to 500K on a 1μm SOI CMOS MOSFET standard 6T-SRAM cell. The Sentaurus TCAD mixedmode numerical simulation showed a significant impact of the temperature on the current induced by the radiation and as a result, an increase of the 6T-SRAM sensitivity upon radiation. A SOI MOSFET compact model introduced in SPICE as a Verilog-A module reproducing the single event effects was developed. This model shows a very good agreement with the TCAD simulations results but with a drastic reduction of the simulation time. Furthermore this model could be extended to other circuits simulations. This result is of importance to allow for extensive circuit design studies which cannot be carried out with TCAD physical simulations.

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Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER

Cited by 66 publications

References 25 publications

Proton induced single event upset cross section prediction for 0.15 μm six-transistor (6T) silicon-on-insulator static random access memories

Proton induced single event upset cross section prediction for 0.15 μm six-transistor (6T) silicon-on-insulator static random access memories

Monte Carlo Simulation of Neutrons, Protons, Ions and Alpha Particles Involved in Soft Errors in Advanced Memories

Compact modeling of the high temperature effect on the single event transient current generated by heavy ions in SOI 6T-SRAM

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