Gain guided AlGaAs lasers in which the current is restricted to flow between two narrow stripes have been fabricated. The double current confinement configuration, which is fabricated by a selective meltback-growth technique, enables the current injection to be restricted to a very narrow section of the active layer. These lasers exhibit very strong antiguiding and operate in many longitudinal modes, which are characteristics of narrow stripe lasers. Potential applications of the twin vertical stripe configuration include arrays of optically coupled lasers and, if a real index waveguiding mechanism can be combined with double current confinement, low threshold lasers.PACS numbers: 42.55. Px, 42.80.Sa One of the most widely studied classes of injection lasers are the gain guided stripe geometry lasers. The primary advantage of these laser structures is the simplicity of their fabrication. However, there are several disadvantages of gain guided stripe lasers, such as higher threshold currents than the more complicated buried heterostructure and transverse junction stripe laser structures. Due to spatial hole burning, the transverse mode patterns of wide stripe, gain guided lasers do not remain stable if the current is increased much above threshold. The output beams of gain guided lasers can also have a large amount of astigmatism. Recently, there has been a great amount of work done, both experimentally and theoretically 1 -3 on the influence of the stripe width on the properties of gain guided lasers. The problem of spatial hole burning has been found to be greatly reduced in narrow stripe lasers, such as the V-groove laser. 4 Narrow stripe lasers having very large astigmatism factors have been reported. These lasers also operate in many longitudinal modes which have been explained by the high spontaneous emission factors expected in lasers with large astigmatism.5·6 In this letter, we report on gain guided lasers in which the current is confined to flow between two narrow stripes located above and below the active layer. This laser structure is a modification of the double current confinement (DCC) configuration developed by Tsang and Logan.
7In the original DCC structure it was reported to be difficult to obtain injecting stripes with widths less than 10 f.l· The structure which we are reporting on is capable of restricting carrier injection to an extremely narrow width of the active layer. Injecting stripe widths of 2 J.l were routinely obtained and injecting stripe widths as narrow as 0.5 J.l have been obtained. Our main emphasis in this letter will be simply describing the structure and the properties of these lasers. However, we believe the narrow stripe DCC configuration has potential applications in the fabrication oflow threshold laser structures and arrays of optically coupled lasers.The narrow stripe DCC laser structure is shown in Fig. 1. Current confinement is provided by an oxide stripe above the active layer and by n-type blocking layers below the active layer. The fabrication of the narrow st...