Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen

Determination of the contribution of defect creation and charge trapping to the degradation of a-Si:H/SiN TFTs at room temperature and low voltages

“…The stretched exponential equation [12] or the stretched hyperbola [13] are usually deduced assuming that the degradation is due to the creation of defects at the interface or in the bulk of a-Si:H. The dispersive charge equation [14] or the logarithmic equation [15] are used when assuming that the degradation occurs because of the charge trapping at the interface or in the bulk of SiN.…”

Distribution of hydrogen in low temperature passivated amorphous silicon (a-Si:H) films from neutron reflectivity

“…A number of models based upon activated transport and hydrogen transport have been proposed to explain the electronic characteristics [30,31]. Charge trapping at the a-Si:H/SiN:H interface indicates that hydrogen diffusion is critical to understanding metastable electrical properties of a-Si:H [32]. Thus, the hydrogen content at the interface and the relative size of the excess will play a major role in the long term stability of a-Si:H based devices.…”

Drain bias dependent bias temperature stress instability in a-Si:H TFT

“…doi:10.1016/j.sse.2008.11.011 [3][4][5]7,8]. Defect state creation is dominant when the gate bias is low.…”

“…In the conventional applications as a switch element in active matrix liquid crystal display (AMLCD), a-Si:H TFTs provide a voltage driving capability and operate under a pulsed linear-mode stress. The instability in threshold voltage of a-Si:H TFTs has been extensively studied [3][4][5][6][7][8][9]. Most studies were made under a gate bias (V GS ) stress only because the effect of drain bias stress on V t instability is deemed not important in AMLCD application.…”