Creating standard resistors based on germanium and silicon single crystals grown under microgravity conditions

Estimation of liquid phase diffusion coefficients of gallium and antimony in germanium from segregation data in crystal growth experiments

“…Such data were then translated into a boundary layer thickness, and through Eq. (7) in an estimation of D. The data were analysed in sub-classes pertaining to a given rotation rate, but the details on the fitting procedure are scarce.…”

“…Refs. [1][2][3][4][5][6][7]. In addition, due to its moderate melting temperature and reactivity, germanium is also widely used as a model semiconductor in the field of crystal growth.…”