2005
DOI: 10.1140/epjd/e2005-00055-3
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Creating Ioffe-Pritchard micro-traps from permanent magnetic film with in-plane magnetization

Abstract: Abstract. We present designs for Ioffe-Pritchard type magnetic traps using planar patterns of hard magnetic material. Two samples with different pattern designs were produced by spark erosion of 40 µm thick

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Cited by 23 publications
(20 citation statements)
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“…Our trapping configuration is based on magnetic micro-structures, which have been proposed and demonstrated for atom trapping both using current-carrying wires [25,26,27] and permanent magnetic structures [28,29,30]. We start from a ring-shaped magnetic quadrupole field, generated by two concentric rings of magnetized material with out-of-plane magnetization M; see Fig.…”
Section: Trap Designmentioning
confidence: 99%
“…Our trapping configuration is based on magnetic micro-structures, which have been proposed and demonstrated for atom trapping both using current-carrying wires [25,26,27] and permanent magnetic structures [28,29,30]. We start from a ring-shaped magnetic quadrupole field, generated by two concentric rings of magnetized material with out-of-plane magnetization M; see Fig.…”
Section: Trap Designmentioning
confidence: 99%
“…[17][18][19] Previously, the films of FePt ranging in thickness from 200 to 400 nm were deposited by sputtering techniques. 20 These films were not compatible with the structures in the few 100 nm range, due to their thickness, flatness, and grain size. Therefore, new films were deposited by molecular beam epitaxy (MBE).…”
Section: Molecular Beam Epitaxy Of Mono-crystalline Fept Filmsmentioning
confidence: 99%
“…Assuming a wire resistance of 2 Ω and a steadystate current of 1.5 A, the resulting power dissipation is more than 4 W (ignoring the additional power needed to generate external bias fields). One way to mitigate this loss is to use a planar configuration of permanent magnets on the chip as the final trap [32]. Chip wires can then be used for the much shorter stage of transferring atoms to the chip.…”
Section: Description Of Proposed Apparatusmentioning
confidence: 99%